ChipFind - документация

Электронный компонент: 770

Скачать:  PDF   ZIP

Document Outline

Freescale Semiconductor, Inc., 2003, 2005. All rights reserved.
Freescale Semiconductor
Technical Data
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
MC13770/D
Rev. 2, 11/2003
MC13770
Package Information
Plastic Package
Case 1345
(QFN-12)
(Scale 2:1)
Ordering Information
Device
Device Marking
Package
MC13770FC
770
QFN-12
1
Introduction
The MC13770 is a single band front-end IC designed for
wireless receiver applications. It contains a low noise
LNA and a high linearity mixer. The LNA is integrated
with a bypass switch to preserve input intercept
performance. The device is fabricated using Freescale's
Advanced RF BiCMOS process using the SiGe:C option
and is packaged in a 12 pin Quad Flat Non-leaded
package.
1.1
Features
RF Input Frequency: 2100 to 2400 MHz
LNA Gain = 15 dB (Typ)
LNA Input 3rd Order Intercept Point (IIP3) =
0 dBm (Typ)
LNA Noise Figure (NF) = 1.5 dB (Typ)
Bypass Mode Included for Improved Intercept
Point Performance
Double Balanced Mixer
Mixer Conversion Gain = 10 dB (Typ)
Mixer Noise Figure (NF) = 8.0 dB (Typ)
MC13770
Single Band LNA and Mixer FEIC
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Electrical Specifications . . . . . . . . . . . . . . . . 2
3 Contact Description . . . . . . . . . . . . . . . . . . . . 4
4 Applications Information . . . . . . . . . . . . . . . . 4
5 Packaging Information. . . . . . . . . . . . . . . . . . 7
MC13770 Technical Data, Rev. 2
2
Freescale Semiconductor
Electrical Specifications
Mixer Input 3rd Order Intercept Point (IIP3) = -3.0 dBm (Typ)
Total Supply Current = 8.0 mA
LNA = 3.0 mA
Mixer = 5.0 mA
Figure 1. Simplified Block Diagram
2
Electrical Specifications
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
V
CC
3.6
V
Storage Temperature Range
T
stg
-65 to 150
C
Operating Temperature Range
T
A
-40 to 85
C
Note: Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be
restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
100 V and Machine Model (MM) 30 V.
Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Voltage
2.7
2.75
3.0
Vdc
Logic Voltage (Enable and Bypass Pins)
V
Input High Voltage
0.85 V
CC
-
V
CC
Input Low Voltage
0
-
0.15 V
CC
LNA Out
Mix In
LO In+
IF+
IF-
LNA In
Bypass
Enable
LO In-
Mix Bias
Electrical Specifications
MC13770 Technical Data, Rev. 2
Freescale Semiconductor
3
Table 3. Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Turn-on Time
-
100
-
ns
LNA High Gain Mode (Frequency = 2140 MHz, V
CC
= 2.75 V, Bypass = 2.75 V, Enable = 2.75 V)
LNA Gain
-
15
-
dB
LNA Noise Figure
-
1.5
-
dB
LNA Input IP3
-
0
-
dBm
LNA Supply Current
I
DD
-
3.0
-
mA
LNA Low Gain Mode (RF = 2140 MHz, V
CC
= 2.75 V, Bypass = 0 V, Enable = 2.75 V)
LNA Gain
-
-5.0
-
dB
LNA Noise Figure
-
5.0
-
dB
LNA Input IP3
-
20
-
dBm
LNA Supply Current
I
DD
-
10
-
A
Mixer Mode (RF = 2140 MHz, LO = 2520 MHz, V
CC
= 2.75 Vdc, Enable = 2.75 V)
Conversion Gain
-
10
-
dB
SSB Noise Figure
-
8.0
-
dB
Input IP3
-
-3.0
-
dBm
Supply Current
-
5.0
-
mA
LO Drive Level
-
-10
-
dBm
Note: Tone spacing for IIP3 measurement is 5.0 MHz.
Table 4. Truth Table
(1 = 2.75 V, 0 = 0 V)
Enable
Bypass
Mode
0
0
Sleep
0
1
Undefined - do not use
1
0
Low Gain
1
1
High Gain
MC13770 Technical Data, Rev. 2
4
Freescale Semiconductor
Contact Description
3
Contact Description
4
Applications Information
Figure 2
shows the typical application circuit for 2110 to 2140 MHz band. The Mixer input is internally
broadband matched. Two typical IF output match circuits are provided in
Table 6
on page 5
.
Table 5. Contact Function Description
Pin
Symbol
Description
1
LNA Out
LNA Output
2
Bypass
LNA Bypass Control
3
Mix In
Mixer Input
4
Enable
Chip Enable
5
LO+
Local Oscillator Input +
6
LO-
Local Oscillator Input -
7
IF+
Differential IF Output +
8
IF-
Differential IF Output -
9
V
CC
Supply
10
LNA In
LNA Input
11
Gnd
Ground
12
Mix Bias
Mixer Bias Adjustment
Applications Information
MC13770 Technical Data, Rev. 2
Freescale Semiconductor
5
Figure 2. Application Schematic
Table 6. Bill of Material for Application Schematic
Component
190 MHz IF
380 MHz IF
C3
1.2 pF
2.2 pF
C4
1.2 pF
2.2 pF
C10
1.2 pF
1.2 pF
L3
150 nH
39 nH
L4
150 nH
39 nH
R3
5.0 k
20 k
Note: All other components are the same for both configurations.
10
11
12
9
8
7
6
5
1
2
3
4
C11 1.0 pF
Mix In
LNA In
IF
L1
2.7 nH
Bypass
LNA Out
V
CC2
V
CC1
C7
33 pF
C9
0.01 F
C1 33 pF
C12
0.5 pF
C2 33 pF
C8 0.01 F
L3 *
L4 *
C3 *
C4 *
C10 *
8:1
C5
33 pF
C6
33 pF
Enable
LO+
R1
4.3 k
L2
2.7 nH
Mini-Circuits
TC8-1 Transformer
R3

*
R2
470
* See
Table 6
for values.