1
T-pack (L)
T-pack (S)
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
900
Continuous drain current
I
D
3.5
Pulsed drain current
I
D(puls]
14
Gate-source voltage
V
GS
35
Repetitive or non-repetitive
I
AR *2
3.5
Maximum Avalanche Energy
E
AS *1
258
Max. power dissipation
P
D
80
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK2768-01L,S
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=900V
V
GS
=35V
I
D
=2.0A V
GS
=10V
I
D
=2.0A V
DS
=25V
V
CC
=600V I
D
=3.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
mA
nA
S
pF
A
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.56
75.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
T
ch
=25C
V
GS
=0V T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
L=100 H T
ch
=25C
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
A
A
V
A
mJ
W
C
C
*1 L=38.6mH, Vcc=90V *2 Tch=150C
900
3.5
4.0
4.5
10
500
0.2
1.0
10
100
4.0
5.5
1.0
2.0
450
680
75
120
40
60
20
30
40
60
50
80
25
40
3.5
1.0
1.5
1000
5.0
-55 to +150
<
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
2
Characteristics
2SK2768-01L,S
FUJI POWER MOSFET
0
50
100
150
0
10
20
30
40
50
60
70
80
90
100
Power Dissipation
PD=f(Tc)
PD [W]
Tc [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
t=0.01
s
Safe operating area
DC
100ms
10ms
1ms
100
s
VDS [V]
ID [A]
1
s
10
s
t
T
D=
t
T
0
1
2
3
4
5
6
7
8
9
10
10
-2
10
-1
10
0
10
1
Typical transfer characteristic
ID [A]
VGS [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
Typical forward transconductance
gfs [s]
ID [A]
ID=f(VDS):D=0.01,Tc=25C
ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C
gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C
3
2SK2768-01L,S
FUJI POWER MOSFET
-50
0
50
100
150
0
2
4
6
8
10
12
14
16
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=2A,VGS=10V
RDS(on) [
]
Tch [
o
C]
-50
0
50
100
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
min.
typ.
max.
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
VGS(th) [V]
Tch [
o
C]
0
10
20
30
40
50
60
70
80
0
100
200
300
400
500
600
700
800
Vcc=180V
450V
720V
180V
450V
Vcc=720V
VGS [V]
VDS [V]
Typical gate charge characteristic
Qg [nC]
0
5
10
15
20
25
30
35
40
10
-2
10
-1
10
0
10
1
10
2
10p
100p
1n
10n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
Ciss
Coss
Crss
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-2
10
-1
10
0
10
1
Tch=25
o
C typ.
Forward characteristic of reverse of diode
IF [A]
VSD [V]
0
50
100
150
0
50
100
150
200
250
300
Avalanche energy derating
Eas [mJ]
Starting Tch [
o
C]
VGS=f(Qg):ID=3.5A,Tch=25C
IF=f(VSD):80s Pulse test,VGS=0V
Eas=f(starting Tch):Vcc=90V,I
AV
=3.5A
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