1
TO-220F
Item
Symbol
Ratings
Unit Remarks
Drain-source voltage
V
DS
250
V
DSX
220
Continuous Drain Current
I
D
14
Pulsed Drain Current
I
D(puls]
56
Gate-Source Voltage
V
GS
30
Maximum Avalanche current
I
AR
14
Non-Repetitive
E
AS
301.1
Maximum Avalanche Energy
Repetitive
E
AR
3.7
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dV
DS
/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Peak Diode Recovery -di/dt
-di/dt
100
Max. Power Dissipation
P
D
37
2.16
Operating and Storage
T
ch
+150
Temperature range
T
stg
Isolation Voltage
V
ISO
2
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3913-01MR
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero Gate Voltage Drain Current I
DSS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=30V
I
D
=7A V
GS
=10V
I
D
=7A V
DS
=25V
V
CC
=48V I
D
=7A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
mA
nA
m
S
pF
nC
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
3.378
58
C/W
C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MH
V
CC
=125V
I
D
=14A
V
GS
=10V
I
F
=14A V
GS
=0V T
ch
=25C
I
F
=14A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
mJ
kV/s
kV/s
A/s
W
C
C
kVrms
250
3.0
5.0
25
2
100
220
280
5
10
780
1170
90
135
6.0
9.0
12
18
3
4.5
23
35
6
9
22
33
7.0
11
6.0
9.0
1.00
1.50
120
250
0.5
1.25
-55 to +150
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *2
Note *3
V
DS
250V
Note *4
Note *5
Tc=25C
Ta=25C
t=60sec f=60Hz
=
<
Note *1:Tch 150C,Repetitive and Non-repetitive
Note *2:StartingTch=25C,I
AS
=6A,L=14.1mH,
V
CC
=48V,R
G
=50
EAS limited by maximum channel temperature
and avalanch current.
See to the `Avalanche Energy' graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the `Transient Theemal impedance'
graph
Note *4:I
F
-I
D
, -di/dt=100A/
s,V
CC
BV
DSS
,Tch 150C
Note *5:I
F
-I
D
, dv/dt=5kV/
s,V
CC
BV
DSS
,Tch 150C
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
=
<
=
<
=
<
=
<
=
<
=
<
2
Characteristics
2SK3913-01MR
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
C]
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
20V
10V
8V
7V
6.5V
ID
[A
]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25
C
VGS=6V
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
ID
[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25
C
0.1
1
10
100
0.1
1
10
100
g
f
s [S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25
C
0
5
10
15
20
25
30
35
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS
(o
n) [
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25
C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RD
S
(
o
n
)
[
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
3
2SK3913-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS
(
th)
[V]
Tch [
C]
0
10
20
30
40
50
60
70
0
4
8
12
16
20
24
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25
C
VGS
[V]
200V
250V
Vcc= 50V
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C [
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25
C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [n
s]
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
I
AS
=5.6A
I
AS
=8.4A
I
AS
=14A
EA
V [m
J
]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A
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