H04-004-07
Fuji Electric Co.,Ltd.
Matsumoto Factory
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
4MBI100T-060
MS5F 5431
1
14
MS5F 5431
Apr. 23 '03
S.Ogawa
Apr. 23 '03
T.Miyasaka
Apr. - 23 - '03
K.Yamada
T.Fujihira
H04-004-06
R e v i s e d R e c o r d s
Date
Classi-
fication
Ind.
Content
Applied
date
Drawn
Checked
Approved
enactment
Issued
date
MS5F 5431
2
14
Apr. - 23- '03
T.Miyasaka
K.Yamada
T.Fujihira
H04-004-03
14
MS5F 5431
3
4MBI100T-060
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
( ) shows reference dimension.
H04-004-03
14
MS5F 5431
4
3. Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified
Items
Symbols
Conditions
Maximum
Ratings
Units
Collector-Emitter voltage
VCES
Ic=1mA
600
V
Gate-Emitter voltage
VGES
20
V
Ic
Duty=100 %
100
Collector current
Ic pulse
1ms
200
A
IF
Duty=50 %
100
IF pulse
1ms
200
Collector Power Dissipation
Pc
310
W
Junction temperature
Tj
150
Storage temperature
Tstg
-40~ +125
Isolation voltage
(*1)
Viso
AC : 1min.
2500
V
Screw Torque
Mounting
(*2)
3.5
Nm
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25unless otherwise specified)
Characteristics
Items
Symbols
Conditions
min.
typ.
Max.
Units
Zero gate voltage
Collector current
I
CES
V
GE
=
0 V, V
CE
=
600 V
-
-
1.0
mA
Gate-Emitter leakage current
I
GES
V
CE
=
0 V, V
GE
=
20 V
-
-
200
nA
Gate-Emitter
threshold voltage
V
GE(th)
V
CE
=
20 V, Ic =
100 mA
6.2
6.7
7.7
V
Collector-Emitter
VCE(sat)
V
GE
=
15 V
Chip
-
1.8
2.2
V
saturation voltage
Ic =
100 A
Terminal
-
2.1
2.5
Input capacitance
Cies
VGE =
0 V
-
8500
-
Output capacitance
Coes
V
CE
=
10 V
-
1500
-
pF
Reverse transfer capacitance
Cres
f =
1 MHz
-
1300
-
ton
Vcc =
300 V
-
0.4
1.2
Turn-on time
tr
Ic =
100 A
-
0.25
0.6
tr
(i)
V
GE
=
15 V
-
0.1
-
s
Turn-off time
toff
R
G
=
33
-
0.4
1.2
tf
-
0.04
0.45
Forward on voltage
V
F
I
F
=
100 A
Chip
-
1.7
2.2
V
Terminal
-
2.0
2.5
Reverse recovery time
trr
IF =
100 A
-
-
0.3
s
Allowabe avalanche energy
during short circuit cutting off
P
AV
Ic > 200A ,Tj = 125
55
-
-
mJ
(Non-repetitive)
5. Thermal resistance characteristics
Characteristics
Items
Symbols
Conditions
min.
typ.
Max.
Units
Thermal resistance
R
th(j-c)
IGBT
-
-
0.400
(1 device)
FWD
-
-
1.02
/
Contact Thermal resistance
R
th(c-f)
With thermal compound
-
0.05
-
* This is the value which is defined mounting on the additional cooling fin
with thermal compound.
1 device
H04-004-03
14
MS5F 5431
5
6. Indication on module
9. Definitions of switching time
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
V
CE
Ic
0V
0A
0V
10%
90%
10%
10%
90%
90%
0V
Ic
V
CE
on
on
on
on
t
t
t
t
r
r
r
r
t
t
t
t
r(i)
r(i)
r(i)
r(i)
t
t
t
t
off
off
off
off
t
t
t
t
f
f
f
f
t
t
t
t
rr
rr
rr
rr
I
I
I
I
rr
rr
rr
rr
t
t
t
t
7. Applicable category
This specification is applied to IGBT Module named 4MBI100T-060
8. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35 and
humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when tranporting.
4MB I100T-060
100A 600V
Lot No.
P lace of m anufuc turing
H04-004-03
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MS5F 5431
6
11. UL recognition
This products is recognized by Underwriters Laboratories Inc., the file No. is E82988.
12. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No.
- Products quantity in a packing box
*
Each modules are packed with electrical protection.
Packing box
Display
10. Definition of the allowable avalance energy during short circuit cutting off
-VCEP
1
2
VCE
VCEPICPtf(SC)
-ICP
IC
tf(SC)
PAV=
H04-004-03
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MS5F 5431
13. Reliability test results
7
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 Terminal Strength Pull force
: 20N
Test Method 401
5
( 1 : 0 )
(Pull test)
Test time
: 101 sec.
Method
2 Mounting Strength Screw torque
: 2.5 ~ 3.5 Nm (M5)
Test Method 402
5
( 1 : 0 )
Test time
: 101 sec.
method
3 Vibration
Range of frequency : 10 ~ 500Hz
Test Method 403
5
( 1 : 0 )
Sweeping time
: 15 min.
Reference 1
Acceleration
: 100m/s
2
Condition code B
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
4 Shock
Maximum acceleratio : 5000m/s
2
Test Method 404
5
( 1 : 0 )
Pulse width
: 1.0msec.
Condition code B
Direction
: Each X,Y,Z axis
Test time
: 3 times/direction
5 Solderabitlity
Solder temp.
: 2355
Test Method 303
5
( 1 : 0 )
Immersion time
: 50.5sec.
Condition code A
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
Solder temp.
: 2605
Test Method 302
5
( 1 : 0 )
Soldering Heat
Immersion time
: 101sec.
Condition code A
Test time
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
1 High Temperature Storage temp.
: 1255
Test Method 201
5
( 1 : 0 )
Storage
Test duration
: 1000hr.
2 Low Temperature Storage temp.
: -405
Test Method 202
5
( 1 : 0 )
Storage
Test duration
: 1000hr.
3 Temperature
Storage temp.
: 852
Test Method 103
5
( 1 : 0 )
Humidity
Relative humidity
: 855%
Test code C
Storage
Test duration
: 1000hr.
4 Unsaturated
Test temp.
: 1202
Test Method 103
5
( 1 : 0 )
Pressure Cooker Atmospheric pressure: 1.7 10
5
Pa
Test code E
Test humidity
: 855%
Test duration
: 96hr.
5 Temperature
Test Method 105
5
( 1 : 0 )
Cycle
Test temp.
: Low temp. -405
High temp. 125 5
RT 5 ~ 35
Dwell time
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles
: 100 cycles
6 Thermal Shock
+0
Test Method 307
5
( 1 : 0 )
Test temp.
: High temp. 100
-5
method
+5
Condition code A
Low temp. 0
-0
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
Transfer time
: 10 sec.
Number of cycles
: 10 cycles
Mechanical Tests
Environment Tests
H04-004-03
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MS5F 5431
8
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Note
Lower limit Upper limit
Electrical
Leakage current
ICES
-
USL2
mA
characteristic
IGES
-
USL2
A
Gate threshold voltage
VGE(th)
LSL0.8
USL1.2
mA
Saturation voltage
VCE(sat)
-
USL1.2
V
Forward voltage
VF
-
USL1.2
V
Thermal
IGBT
VGE
-
USL1.2
mV
resistance
or
VCE
FWD
VF
-
USL1.2
mV
Isolation voltage
Viso
Broken insulation
-
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 High temperature
Test Method 101
5
( 1 : 0 )
Reverse Bias
Test temp.
: Ta = 1255
(Tj
150 )
Bias Voltage
: VC = 0.8VCES
Bias Method
: Applied DC voltage to C-E
VGE = 0V
Test duration
: 1000hr.
2 High temperature
Test Method 101
5
( 1 : 0 )
Bias (for gate)
Test temp.
: Ta = 1255
(Tj
150 )
Bias Voltage
: VC = VGE = +20V or -20V
Bias Method
: Applied DC voltage to G-E
VCE = 0V
Test duration
: 1000hr.
3 Temperature
Test Method 102
5
( 1 : 0 )
Humidity Bias
Test temp.
: 852
o
C
Condition code C
Relative humidity
: 855%
Bias Voltage
: VC = 0.8VCES
Bias Method
: Applied DC voltage to C-E
VGE = 0V
Test duration
: 1000hr.
4 Intermitted
ON time
: 2 sec.
Test Method 106
5
( 1 : 0 )
Operating Life
OFF time
: 18 sec.
(Power cycle)
Test temp.
:
Tj=1005 deg
( for IGBT )
Tj
150 , Ta=255
Number of cycles
: 15000 cycles
Endurance Tests
Endurance Tests
H04-004-03
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MS5F 5431
9
Reliability Test Results
Test
cate-
gorie
s
Test items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of test
sample
Number
of
failure
sample
1 Terminal Strength
Test Method 401
5
0
(Pull test)
Method
2 Mounting Strength
Test Method 402
5
0
method
3 Vibration
Test Method 403
5
0
Condition code B
4 Shock
Test Method 404
5
0
Condition code B
5 Solderabitlity
Test Method 303
5
0
Condition code A
6 Resistance to Soldering Heat
Test Method 302
5
0
Condition code A
1 High Temperature Storage
Test Method 201
5
0
2 Low Temperature Storage
Test Method 202
5
0
3 Temperature Humidity
Test Method 103
5
0
Storage
Test code C
4 Unsaturated
Test Method 103
5
0
Pressure Cooker
Test code E
5 Temperature Cycle
Test Method 105
5
0
6 Thermal Shock
Test Method 307
5
0
method
Condition code A
1 High temperature Reverse Bias
Test Method 101
5
0
2 High temperature Bias
Test Method 101
5
0
( for gate )
3 Temperature Humidity Bias
Test Method 102
5
0
Condition code C
4 Intermitted Operating Life
Test Method 106
5
0
(Power cycling)
( for IGBT )
Mechanical Tests
Environment Tests
Endurance Tests
Mechanical Tests
Environment Tests
Endurance Tests
H04-004-03
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MS5F 5431
10
0
1
2
3
4
5
0
100
200
300
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
C
o
l
l
e
c
t
o
r
c
u
r
r
en
t
:
I
c
[
A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
100
200
300
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
c
t
o
r
c
u
r
r
en
t
:
I
c
[
A ]
0
1
2
3
4
0
100
200
300
Tj= 25C
Tj= 125C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
:
I
c
[
A ]
5
10
15
20
25
0
2
4
6
8
10
12
Ic=50A
Ic=100A
Ic=200A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Co
l
l
ecto
r -
E
m
it
te
r
v
o
lta
g
e
:
V
C
E
[
V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
200
1000
5000
10000
20000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Ca
pa
c
i
ta
nce
:
Ci
e
s
,
Co
es, Cres
[
pF
]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
100
200
300
400
500
600
0
100
200
300
400
500
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25C
Gate charge : Qg [ nC ]
Co
l
l
ecto
r -
E
m
it
te
r
v
o
lta
g
e
:
V
C
E
[
V ]
0
5
10
15
20
25
G
a
te
-
Em
i
t
t
e
r
v
o
l
t
a
g
e
: V
G
E [
V
]
H04-004-03
14
MS5F 5431
11
0
50
100
150
200
10
100
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C
S
w
i
t
c
h
i
n
g
time
:
to
n
,
t
r
,
to
ff,
tf
[
n
s
e
c
]
Collector current : Ic [ A ]
0
50
100
150
200
10
100
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg= 33ohm, Tj= 125C
Collector current : Ic [ A ]
S
w
i
t
c
h
i
n
g
time
:
to
n
,
t
r
,
to
ff,
tf
[
n
s
e
c
]
5
10
100
10
100
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C
Gate resistance : Rg [ ohm ]
S
w
i
t
c
h
i
n
g
time
:
to
n
,
t
r
,
to
ff,
tf
[
n
s
e
c
]
0
100
200
0
5
10
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
S
w
i
t
c
h
i
n
g
l
o
s
s
:
E
o
n
,
E
o
f
f,
E
r
r
[ mJ
/p
u
l
s
e
]
Collector current : Ic [ A ]
10
100
500
0
10
20
30
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C
S
w
i
t
c
h
i
n
g
l
o
s
s
:
E
o
n
,
E
o
f
f,
E
r
r
[ mJ
/p
u
l
s
e
]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0
200
400
600
800
0
100
200
300
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t : I
c
[ A
]
H04-004-03
14
MS5F 5431
12
0
1
2
3
0
100
200
Tj=25C
Tj=125C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Fo
r
w
a
r
d
c
u
r
r
e
n
t : I
F
[
A
]
Forward on voltage : VF [ V ]
0
100
200
10
100
300
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
Forward current : IF [ A ]
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
c
u
r
r
e
n
t
:
I
r
r
[ A
]
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
ti
m
e
:
tr
r
[
n
s
ec
]
0.001
0.01
0.1
1
0.01
0.1
1
2
Transient thermal resistance
T
h
e
r
m
a
l
r
e
s
i
s
t
a
n
s
e
:
R
t
h(
j
-
c
)
[ C
/
W
]
Pulse width : Pw [ sec ]
FWD
IGBT
H04-004-03
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MS5F 5431
13
Warnings
Warnings
Warnings
Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
- Connect adequate fuse or protector of circuit between three-phase line and
this product to prevent the equipment from causing secondary destruction.
- Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
- If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
- Use this product within the power cycle curve (Technical Rep.No. : MT6M3947)
(No.: MT6M3947)
- Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact problem.
- Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a critical accident.
100mm100um10um
- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
RBSOA
RBSOA
- If excessive static electricity is applied to the control terminals, the devices may be broken.
Implement some countermeasures against static electricity.
-
Never add the excessive mechanical stress to the main or control terminals
when the product is applied to equipments. The module structure may be broken.
-
In case of insufficient -VGE, erroneous turn-on of IGBT may occur.
-VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V)
-VGE
-VGE : -VGE = -15V)
-
In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur.
Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
dv/dt
+VGE, -VGE, RG
H04-004-03
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MS5F 5431
14
Cautions
Cautions
Cautions
Cautions
- Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However,
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.
- The application examples described in this specification only explain typical ones that used the Fuji Electric
products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine ralaying equipment or systems,please apply after confirmation
of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
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