6MBI25S-120
IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Symbol
Collector-Emitter voltage V
CES
Gate-Emitter voltage V
GES
Collector Continuous Tc=25C I
C
current Tc=80C
1ms Tc=25C I
C
pulse
Tc=80C
-I
C
1ms -I
C
pulse
Max. power dissipation (1 device) P
C
Operating temperature T
j
Storage temperature T
stg
Isolation voltage V
is
Screw torque Mounting *
1
Rating
1200
20
35
25
70
50
25
50
180
+150
-40 to +125
AC 2500 (1min.)
3.5
Unit
V
V
A
A
A
A
W
C
C
V
Nm
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
1.0
0.2
5.5 7.2 8.5
2.3 2.6
2.8
3000
625
550
0.35 1.2
0.25 0.6
0.1
0.45 1.0
0.08 0.3
2.5 3.3
2.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=25mA
Tj=25C V
GE
=15V, I
C
=25A
Tj=125C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=25A
V
GE
=15V
R
G
=51
Tj=25C I
F
=25A, V
GE
=0V
Tj=125C
I
F
=25A
mA
A
V
V
pF
s
V
s
Electrical characteristics (Tj=25C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*
2
0.69
1.30
0.05
IGBT
FWD
the base to cooling fin
C/W
C/W
C/W
*
2
:
This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*
1 :
Recommendable value : 2.5 to 3.5 Nm (M5)
1 3 (P )
1 7 (N )
1 (G u )
2 (E u )
3 (G x)
5 (G v)
6 (E v)
1 6 (U )
7 (G y)
1 5 (V )
1 4 (W )
9 (G w )
1 1 (G z)
1 0 (E w )
4 (E x )
8 (E y)
1 2 (E z)
IGBT MODULE ( S series)
1200V / 25A 6 in one-package
Features
Compact package
P.C.board mount
Low V
CE
(sat)
Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Industrial machines, such as welding machines
6MBI25S-120
IGBT Modules
Characteristics
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emitter voltage
Tj= 25
o
C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emitter voltage
Tj= 125
o
C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
10
20
30
40
50
60
Tj= 25
o
C
Tj= 125
o
C
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic= 12.5A
Ic= 25A
Ic= 50A
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25
o
C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25
o
C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
50
100
150
200
250
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25
o
C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
6MBI25S-120
IGBT Modules
Vcc=600V,V
GE=
15V, Rg=51
,Tj=125
o
C
Vcc=600V,V
GE=
15V, Rg=51
,Tj=25
o
C
0
10
20
30
40
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0
10
20
30
40
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Gate resistance : Rg [
]
Switching time : ton, tr, toff, tf [ nsec ]
0
10
20
30
40
50
0
1
2
3
4
5
6
7
Err(25
o
C)
Eoff(25
o
C)
Eon(25
o
C)
Err(125
o
C)
Eoff(125
o
C)
Eon(125
o
C)
Switching loss vs. Collector current (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10
50
100
500
0
5
10
15
20
Switching loss vs. Gate resistance (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [
]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
10
20
30
40
50
60
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Vcc=600V,V
GE=
15V, Rg=51
Vcc=600V,Ic=25A,V
GE=
15V, Tj=25
o
C
=
+VGE=15V, -VGE<15V, Rg>51
,Tj<125
o
C
=
=
Vcc=600V,Ic=25A,V
GE=
15V,Tj=125
o
C
6MBI25S-120
IGBT Modules
Vcc=600V,V
GE=
15V, Rg=51
107.5
1
93
0.3
69.6
0.3
93
0.3
16.02
15.24
15.24
15.24
15.24
4-6.1
0.3
2-5.5
0.3
45
1
41.91
32
0.3
27.6
0.3
11
+ 0.5
0
3.81
11.43 11.43 11.43 11.43 11.43
1.15
0.2
0.4
2.5
0.1
2.1
0.1
20.5
1
17
1
3.5
0.5
2.5
0.3
1.5
0.3
6.5
0.5
1
0.2
0.8
0.2
6
1.5
Section A-A
A
A
1
12
13
17
Shows theory dimensions
16.02
M623
Outline Drawings, mm
0
1
2
3
4
0
10
20
30
40
50
60
Tj=25
o
C
Tj=125
o
C
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0
10
20
30
40
10
100
300
Irr(125
o
C)
Irr(25
o
C)
trr(25
o
C)
trr(125
o
C)
Reverse recovery characteristics (typ.)
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001
0.01
0.1
1
0.01
0.1
1
5
Transient thermal resistance
Thermal resistanse : Rth(j-c) [
o
C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
PDF 
ZIP