6MBI 50S-120L
6-Pack IGBT
1200V
6x50A
IGBT MODULE ( S-Series )
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Features
NPT-Technologie
Solderable Package
Square SC SOA at 10 x I
C
High Short Circuit Withstand-Capability
Small Temperature Dependence of the Turn-Off
Switching Loss
Low Losses And Soft Switching
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Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
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Outline Drawing
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Maximum Ratings and Characteristics
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Equivalent Circuit
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
V
Gate -Emitter Voltage
V
GES
20
V
Continuous
I
C
75 / 50
Collector
1ms
I
C PULSE
150 / 100
Current (25C / 80C)
Continuous
-I
C
75 / 50
1ms
-I
C PULSE
150 / 100
Max. Power Dissipation
P
C
350
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Screw Torque
Mounting *1
3.5
Nm
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
1.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
200
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=50mA
6.0
9.0
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=50A
2.1
V
Input capacitance
C
ies
V
GE
=0V
6000
Output capacitance
C
oes
V
CE
=10V
pF
Reverse Transfer capacitance
C
res
f=1MHz
t
ON
V
CC
=600V
0.60
1.2
t
r
I
C
=50A
0.40
0.6
t
OFF
V
GE
=
15V
0.45
1.0
t
f
R
G
=24
0.10
0.3
Diode Forward On-Voltage
V
F
I
F
=50A V
GE
=0V
3.3
V
Reverse Recovery Time
t
rr
I
F
=50A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.35
Thermal Resistance
R
th(j-c)
Diode
0.70
C/W
R
th(c-f)
With Thermal Compound
0.05
Turn-on Time
Turn-off Time
s
A
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com
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