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Электронный компонент: 7MBP50RA-060

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7MBP 50RA-060
IGBT IPM
600V
650A+DB
Intelligent Power Module ( R-Series )
n
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Min.
Max.
DC Bus Voltage
V
DC
0
450
DC Bus Voltage (surge)
V
DC(Surge)
0
500
DC Bus Voltage (short operating)
V
SC
200
400
Collector-Emitter Voltage
V
CES
0
600
Inverter
Continuous
I
C
50
Collector
1ms
I
CP
100
A
Current
Duty=62.6%
-I
C
50
Collector Power Dissipation
One Transistor
P
C
198
W
Dynamic Brake
Continuous
I
C
30
Collector Current
1ms
I
CP
60
A
Forward Current of Diode
I
F
30
Collector Power Dissi. DB
One Transistor
P
C
120
W
Voltage of Power Supply for Driver
V
CC
*1
0
20
Input Signal Voltage
V
IN
*2
0
V
Z
Input Signal Current
I
IN
1
mA
Alarm Signal Voltage
V
ALM
*3
0
V
CC
V
Alarm Signal Current
I
ALM
*4
15
mA
Junction Temperature
T
j
150
Operating Temperature
T
OP
-20
100
C
Storage Temperature
T
stg
-40
125
Isolation Voltage
A.C. 1min.
V
iso
2500
V
Mounting *1
3.5
Terminals *1
3.5
Note: *1: Recommendable Value; 2.5
3.0 Nm (M5)
Electrical Characteristics of Power Circuit
( at T
j
=25C, V
CC
=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
Collector Current At Off Signal Input
I
CES
V
CE
=600V,
Input Terminal Open
1.0
mA
INV
Collector-Emitter Saturation Voltage
V
CE(Sat)
I
C
=50A
2.8
V
Forward Voltage of FWD
V
F
-I
C
=50A
3.0
V
Collector Current At Off Signal Input
I
CES
V
CE
=600V,
Input Terminal Open
1.0
mA
DB
Collector-Emitter Saturation Voltage
V
CE(Sat)
I
C
=30A
2.8
V
Forward Voltage of FWD
V
F
-I
C
=30A
3.3
V
Electrical Characteristics of Control Circuit
( at T
j
=25C, V
CC
=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
Current of P-Line Side Driver
(One Unit)
I
CCP
f
SW
=0~15kHz, T
C
=-20~100C
3
18
Current of N-Line Side Driver
(Three Units)
I
CCN
f
SW
=0~15kHz, T
C
=-20~100C
10
65
On
1.00
1.35
1.70
Off
1.25
1.60
1.95
V
Input Zener Voltage
V
Z
R
IN
=20k
8.0
Over Heating Protection Temperature Level
T
COH
V
DC
=0V, I
C
=0A, Case Temp.
110
125
Hysteresis
T
CH
20
IGBT Chips Over Heating Protec. Temp. Level
T
jOH
Surface Of IGBT Chip
150
Hysteresis
T
jH
20
Inverter Collector Current Protection Level
I
OC
T
j
=125C
75
DB Collector Current Protection Level
I
OC
T
j
=125C
45
Over Current Detecting Time
t
DOC
T
j
=25C
10
s
Alarm Signal Hold Time
t
ALM
1.5
2
ms
Limiting Resistor for Alarm
R
ALM
1425
1500
1575
Under Voltage Protection Level
V
UV
11.0
12.5
Hysteresis
V
H
0.2
Dynamic Characteristics
( at T
C
=T
j
=125C, V
CC
=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
t
ON
I
C
=50A, V
DC
=300V
0.3
Switching Time
t
OFF
3.6
s
t
RR
I
F
=50A, V
DC
=300V
0.4
n
n
Outline Drawing
Fig. 1
Screw Torque
V
IN(th)
Input Signal Threshold Voltage
V
V
Nm
mA
C
A
V
7MBP 50RA-060
IGBT IPM
600V
650A+DB
Thermal Characteristics
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Inverter IGBT
0.63
R
th(j-c)
Diode
1.33
R
th(j-c)
DB IGBT
1.04
R
th(c-f)
With Thermal Compound
0.05
n
n
Equivalent Circuit
Drivers include following functions
Short circuit protection circuit
Amplifier for driver
Undervoltage protection circuit
Overcurrent protection circuit
IGBT Chip overheating protection
Thermal Resistance
C/W
7MBP 50RA-060
IGBT IPM
600V
650A+DB
n
n
Dynamic Brake
0
1
2
3
4
0
10
20
30
40
50
60
V
CC
= 1 7 V , 1 5 V , 1 3 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
CE
[V]
0
1
2
3
4
0
10
20
30
40
50
60
V
CC
= 1 7 V , 1 5 V , 1 3 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 1 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
CE
[V]
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
-2
1 0
-1
1 0
0
I G B T
Transient Thermal Resistance
Thermal Resistance : R
th(j-c)
[C/W]
Pulse Width : P
W
[sec]
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
R e v e r s e B i a s e d S a f e O p e r a t i n g A r e a
V
C C
= 1 5 V , T
j
<1 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
P o w e r D e r a t i n g F o r I G B T
(per device)
Collector Power Dissipation : P
C
[W]
C a s e T e m p e r a t u r e : T
C
[C]
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
Over Current Protection vs. Junction Temperature
V
cc
= 1 5 V
Over Current Protection Level : I
oc
[A]
Junction Temperature: T
j
[C]
7MBP 50RA-060
IGBT IPM
600V
650A+DB
n
n
Control Circuit
0
5
1 0
1 5
2 0
2 5
5
1 0
1 5
2 0
2 5
V
C C
= 1 7 V
V
C C
= 1 5 V
V
C C
= 1 3 V
V
C C
= 1 7 V
V
C C
= 1 5 V
V
C C
= 1 3 V
P-Side
N - S i d e
P o w e r S u p p l y C u r r e n t v s . S w i t c h i n g F r e q u e n c y
T
j
= 1 0 0 C
Power Supply Current : I
CC
[mA]
Switching Frequency : fsw [kHz]
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
0,0
0,5
1,0
1,5
2,0
2,5
T
j
= 2 5 C
T
j
= 1 2 5 C
V
in(on)
V
in(off)
Input Signal Threshold Voltage
v s . P o w e r S u p p l y V o l t a g e
Input Signal Threshold Voltage
: V
in(on)
, V
in(off)
[V]
P o w e r S u p p l y V o l t a g e : V
cc
[V]
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
0
2
4
6
8
1 0
1 2
1 4
U n d e r V o l t a g e v s . J u n c t i o n T e m p e r a t u r e
Under Voltage : V
UV
[V]
Junction Temperature : T
j
[C]
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
0,0
0,2
0,4
0,6
0,8
1,0
Under Voltage Hysterisis vs. Junction Temperature
Under Voltage Hysterisis : V
H
[V]
J u n c t i o n T e m p e r a t u r e : T
j
[C]
1 2
1 3
1 4
1 5
1 6
1 7
1 8
0,0
0,5
1,0
1,5
2,0
2,5
3,0
T
j
= 2 5 C
T
j
= 1 0 0 C
A l a r m H o l d T i m e v s . P o w e r S u p p l y V o l t a g e
Alarm Hold Timen : t
ALM
[ms]
P o w e r S u p p l y V o l t a g e : V
cc
[V]
1 2
1 3
1 4
1 5
1 6
1 7
1 8
0
5 0
1 0 0
1 5 0
2 0 0
T
c H
, T
jH
T
cOH
T
jOH
Over Heating Characteristics
T
cOH
, T
jOH
, T
c H
, T
jH
vs. V
cc
Over Heating Protection : T
cOH
, T
jOH
[C]
Over Heating Hysterisis : T
cH
, T
jH
[C]
P o w e r S u p p l y V o l t a g e : V
cc
[V]
7MBP 50RA-060
IGBT IPM
600V
650A+DB
n
n
Inverter
0
1
2
3
4
0
2 0
4 0
6 0
8 0
1 0 0
V
C C
= 1 7 V , 1 5 V , 1 3 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
0
1
2
3
4
0
2 0
4 0
6 0
8 0
1 0 0
V
C C
= 1 7 V , 1 5 V , 1 3 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 1 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
1 0 0
1 0 0 0
t
f
t
off
t
on
Switching Time vs. Collector Current
V
D C
= 3 0 0 V , V
C C
= 1 5 V , T
j
= 2 5 C
Switching Time : t
on
, t
r
, t
off
, t
f
[ns]
Collector Current : I
C
[A]
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
1 0 0
1 0 0 0
t
f
t
off
t
on
Switching Time vs. Collector Current
V
D C
= 3 0 0 V , V
C C
= 1 5 V , T
j
= 1 2 5 C
Switching Time : t
on
, t
r
, t
off
, t
f
[ns]
Collector Current : I
C
[A]
0
1
2
3
4
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
2 5 C
T
j
= 1 2 5 C
F o r w a r d V o l t a g e v s . F o r w a r d C u r r e n t
Forward Current : I
F
[A]
F o r w a r d V o l t a g e : V
F
[V]
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
1 0
1 0 0
I
rr
= 1 2 5 C
t
rr
= 2 5 C
I
rr
= 1 2 5 C
t
rr
= 1 2 5 C
Reverse Recovery Characteristics
t
rr
, I
rr
vs. I
F
Reverse Recovery Current : I
rr
[A]
Reverse Recovery Time : t
rr
[ns]
Forward Current : I
F
[A]
7MBP 50RA-060
IGBT IPM
600V
650A+DB
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
-2
1 0
-1
1 0
0
1 0
1
I G B T
F W D
Transient Thermal Resistance
Thermal Resistance : Rth(j-c) [C/W]
Pulse Width : P
W
[sec]
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
R e v e r s e B i a s e d S a f e O p e r a t i n g A r e a
V
C C
= 1 5 V , T
j
< 1 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
5 0
1 0 0
1 5 0
2 0 0
P o w e r D e r a t i n g F o r I G B T
(per device)
Collector Power Dissipation : P
C
[W]
C a s e T e m p e r a t u r e : T
C
(C)
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
2 0
4 0
6 0
8 0
1 0 0
P o w e r D e r a t i n g F o r F W D
(per device)
Collector Power Dissipation : P
C
[W]
C a s e T e m p e r a t u r e : T
C
(C)
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
E
rr
E
off
E
on
Switching Loss vs. Collector Current
V
DC
= 3 0 0 V , V
CC
= 1 5 V , T
j
= 2 5 C
Switching Loss : E
on
, E
off
, E
rr
[mJ/cycle]
Collector Current : I
C
[A]
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
1
2
3
4
5
6
7
E
rr
E
off
E
on
Switching Loss vs. Collector Current
V
D C
= 3 0 0 V , V
C C
= 1 5 V , T
j
= 1 2 5 C
Switching Loss : E
on
, E
off
, E
rr
[mJ/cycle]
7MBP 50RA-060
IGBT IPM
600V
650A+DB
0
20
40
60
80
1 0 0
1 2 0
1 4 0
0
20
40
60
80
1 0 0
1 2 0
Over Current Protection vs. Junction Temperature
V
cc
= 1 5 V
Over Current Protection Level : I
oc
[A]
Junction Temperature: T
j
[C]
7MBP 50RA-060
IGBT IPM
600V
650A+DB
n
n
Outline Drawing
Weight: 440g
Specification is subject to change without notice
March 98
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com