IGBT-IPM R series
1200V / 75A 7
in one-package
7MBP75RA120
Features
Temperature protection provided by directly detecting the junction
temperature of the IGBTs
Low power loss and soft switching
Compatible with existing IPM-N series packages
High performance and high reliability IGBT with overheating protection
Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25C unless otherwise specified)
Symbol Rating Unit
Min. Max.
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation
One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
V
DC
V
DC(surge)
V
SC
V
CES
V
R
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
T
j
V
CC *1
V
in *2
I
in
V
ALM *3
I
ALM *4
T
stg
T
op
V
iso *5
Item
0
0
200
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
900
1000
800
1200
1200
75
150
75
500
25
50
25
198
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *
6
3.5 *
6
V
V
V
V
V
A
A
A
W
A
A
A
W
C
V
V
mA
V
mA
C
C
kV
Nm
Nm
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply V
ALM
between terminal No. 16 and 10.
*4 Apply I
ALM
to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 Nm
Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
INV
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
I
CES
V
CE(sat)
V
F
I
CES
V
CE(sat)
V
F
V
CE
=1200V input terminal open
Ic=75A
-Ic=75A
V
CE
=1200V input terminal open
Ic=25A
-Ic=25A
1.0 mA
2.6 V
3.0 V
1.0 mA
2.6 V
3.3 V
Fig.1 Measurement of case temperature
7MBP75RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
fsw=0 to 15kHz Tc=-20 to 100C *
7
fsw=0 to 15kHz Tc=-20 to 100C *
7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1
surface of IGBT chips
Tj=125C
Tj=125C
Tj=25C Fig.2
Tj=25C Fig.3
I
ccp
I
CCN
V
in(th)
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
I
OC
t
DOC
V
UV
V
H
t
ALM
t
SC
R
ALM
3
10
1.00
1.25
-
110
-
150
-
113
38
-
11.0
0.2
1.5
-
1425
-
-
1.35
1.60
8.0
-
20
-
20
-
-
10
-
-
2
-
1500
18
65
1.70
1.95
-
125
-
-
-
-
-
-
12.5
-
-
12
1575
mA
mA
V
V
V
C
C
C
C
A
A
s
V
V
ms
s
ohm
Dynamic characteristics(at Tc=Tj=125C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT)
Switching time (FWD)
ton IC=75A, VDC=600V
toff
trr IF=75A, VDC=600V
0.3 - -
- - 3.6
- - 0.4
s
s
s
Thermal characteristics(Tc=25C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- 0.25
- 0.73
- 0.63
0.05 -
C/W
C/W
C/W
C/W
INV IGBT
FWD
DB IGBT
Item Symbol Min. Typ. Max. Unit
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)
V
DC
200 - 800 V
V
CC
13.5 15 16.5
V
f
SW
1 - 20 kHz
- 2.5 - 3.0 Nm
- 2.5 - 3.0 Nm
Recommendable value
*
7
Switching frequency of IPM
7MBP75RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
7MBP75RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
0
10
20
30
40
50
0
5
10
15
20
25
Power supply current vs. Switching frequency
Tj=100C
N-side
P-side
P
o
w
e
r
su
p
p
l
y cu
r
r
e
n
t
:
I
c
c (
m
A
)
Switching frequency : fsw (kHz)
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
0
0.5
1
1.5
2
2.5
12
13
14
15
16
17
18
In pu t s ig na l th re sh old vo lta ge
vs . P o w e r su p ply vo lta ge
I
n
put
s
i
g
n
a
l
t
hres
h
o
l
d
v
o
lt
a
g
e
Power supply voltage : Vcc (V)
T j= 25 C
Tj= 1 25 C
} Vin(on)
} Vin(off)
:
Vi
n
(
o
n),
V
i
n
(
o
f
f
)
(V
)
0
2
4
6
8
10
12
14
20
40
60
80
100
120
140
Under voltage vs. Junction temperature
U
n
d
e
r
v
o
l
t
a
g
e
: VU
V
T
(
V
)
Junction temperature : Tj (C)
0
0.2
0.4
0.6
0.8
1
20
40
60
80
100
120
140
Under voltage hysterisis vs. Jnction temperature
U
n
d
er
v
o
l
t
a
g
e
h
y
s
t
eri
s
i
s
:
V
H
(V)
Junction temperature : Tj (C)
0
0.5
1
1.5
2
2.5
3
12
13
14
15
16
17
18
Alarm hold time vs. Power supply voltage
A
l
a
r
m
h
o
l
d
ti
m
e
:
tA
L
M
(
m
S
e
c
)
Power supply voltage : Vcc (V)
Tj=125C
Tj=25C
0
50
100
150
200
12
13
14
15
16
17
18
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
O
v
er
he
a
t
in
g
pr
ot
e
c
t
i
o
n
:
T
c
O
H
,
T
jO
H
(
C
)
Power supply voltage : Vcc (V)
TjOH
TcOH
TcH,TjH
OH
h
y
s
t
er
is
is
:
T
c
H
,
T
j
H
(
C
)
7MBP75RA120
IGBT-IPM
Inverter
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
3
Collector current vs. Collector-Emitter voltage
Tj=25C
C
o
l
l
ec
tor
C
u
r
r
ent
:
Ic
(
A
)
Collector-Emitter voltage : Vce (V)
Vcc=13V
Vcc=15V
Vcc=17V
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
3
Vcc=13V
Vcc=15V
Vcc=17V
Collector current vs. Collector-Emitter voltage
Tj=125C
C
o
l
l
e
c
t
o
r
Cu
r
r
e
n
t
:
Ic
(
A
)
Collector-Emitter voltage : Vce (V)
10
100
1000
10000
0
20
40
60
80
100
120
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25C
S
w
i
t
c
h
i
ng
t
i
me
:
t
on,
to
ff
,t
f
(nSec
)
Collector current : Ic (A)
toff
ton
tf
100
1000
10000
0
20
40
60
80
100
120
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=125C
Sw
i
t
c
h
in
g
ti
m
e
: t
o
n
,
t
o
f
f
,
t
f
(
n
Se
c
)
Collector current : Ic (A)
toff
ton
tf
0
20
40
60
80
100
120
0
0.5
1
1.5
2
2.5
3
Forward current vs. Forward voltage
F
o
rw
a
r
d
C
u
rre
n
t
:
I
f
(
A
)
Forward voltage : Vf (V)
125C
25C
10
100
1000
0
20
40
60
80
100
120
Reverse recovery characteristics
trr,Irr vs. IF
Re
v
e
rs
e
rec
o
v
e
r
y
c
u
r
r
ent
:
I
rr(
A
)
Rev
e
rs
e rec
o
v
e
r
y
t
i
m
e
:
trr
(
nS
ec
)
Forward current : IF(A)
trr125C
trr25C
Irr125C
Irr25C
7MBP75RA120
IGBT-IPM
0.01
0.1
1
0.001
0.01
0.1
1
T ra n s ie n t th e rm a l re s is ta n c e
T
h
e
r
m
a
l r
e
s
i
st
a
n
ce
:
R
t
h
(
j-
c)
(
C
/
W
)
Pulse width :Pw (sec)
FWD
IGBT
0
150
300
450
600
750
900
1050
0
200
400
600
800
1000
1200
1400
Reversed biased safe operating area
Vcc=15V,Tj 125C
C
o
ll
e
c
t
o
r c
u
rr
e
n
t
:
I
c
(
A
)
Collector-Emitter voltage : Vce (V)
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
0
100
200
300
400
500
600
0
20
40
60
80
100
120
140
160
Power derating for IGBT
(per device)
C
o
l
l
e
c
t
e
r
P
o
we
r
Dis
sip
a
t
i
o
n
:
P
c
(
W
)
Case Temperature : Tc (C)
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
P o w e r d e r a tin g fo r F W D
(p e r d e v ic e )
C
oll
ec
t
er
Pow
e
r
D
i
s
s
i
pa
t
i
o
n
:
P
c
(
W
)
Case Temperature : Tc (C)
0
5
10
15
20
25
30
35
0
20
40
60
80
100
120
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25C
Sw
i
t
c
h
i
n
g
l
o
s
s
:
Eon
,
Eof
f
,
Err
(m
J
/
c
y
c
l
e
)
Collector current : Ic (A)
Eon
Eoff
Err
0
5
10
15
20
25
30
35
0
20
40
60
80
100
120
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=125C
Eon
Eoff
Err
S
w
i
t
c
h
in
g
lo
s
s
:
E
o
n
,
E
o
f
f
,
E
r
r
(
m
J
/
cyc
l
e
)
Collector current : Ic (A)
7MBP75RA120
IGBT-IPM
0
50
100
150
200
250
300
0
20
40
60
80
100
120
140
Over current protection vs. Junction temperature
Vcc=15V
O
v
er
cu
r
r
en
t
pro
t
e
c
ti
on
l
e
v
e
l
: I
o
c
(
A
)
Junction temperature : Tj(C)
7MBP75RA120
IGBT-IPM
Brake
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
C o lle c to r c u rren t v s . C ollec to r-E m itte r v o lta g e
T j= 2 5 C
Vcc=13V
Vcc=15V
Vcc=17V
Col
l
ec
to
r
Cu
rr
e
n
t
:
Ic
(
A
)
Collector-Emitter voltage : Vce (V)
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
Collector current vs. Collector-Emitter voltage
Tj=125C
Vcc=13V
Vcc=15V
Vcc=17V
C
o
l
l
e
c
to
r
C
u
r
r
e
n
t
: I
c
(
A
)
Collector-Emitter voltage : Vce (V)
0.01
0.1
1
0.001
0.01
0.1
1
Transient thermal resistance
T
her
m
a
l
r
e
s
i
st
an
ce
:
R
t
h
(
j
-
c
)
(
C/
W
)
Pulse width :Pw (sec)
IGBT
0
50
100
150
200
250
300
350
0
200
400
600
800
1000
1200
1400
Reversed biased safe operating area
Vcc=15V,Tj 125C
C
o
l
l
e
c
t
o
r
c
u
rren
t
:
I
c
(A)
Collector-Emitter voltage : Vce (V)
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
0
50
100
150
200
250
0
20
40
60
80
100
120
140
160
Power derating for IGBT
(per device)
Co
l
l
e
c
t
e
r P
o
we
r Dis
s
i
p
a
ti
on
: P
c
(W
)
Case Temperature : Tc (C)
0
20
40
60
80
100
0
20
40
60
80
100
120
140
Over current protection vs. Junction temperature
Vcc=15V
O
v
er
cu
r
r
en
t
pro
t
e
c
ti
on
l
e
v
e
l
: I
o
c
(
A
)
Junction temperature : Tj(C)
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