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Электронный компонент: 7MBR15NE120

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7MBR15NE120
IGBT Modules
IGBT MODULE
1200V / 15A / PIM
Features
High Speed Switching
Voltage Drive
Low Inductance Module Structure
Converter Diode Bridge Dynamic Brake Circuit
Applications
Inverter for Motoe Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Symbol Condition Ra ting Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
It (Non-Repetitive)
Con
v
e
r
ter Bra
k
e In
v
e
r
t
er
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
I
F(AV)
I
FSM
V
RRM
V
RSM
I
O
I
FSM
T
j
T
stg
V
iso
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150C, 10ms
Tj=150C, 10ms
AC : 1 minute
1200
20
15
30
15
120
1200
20
10
20
88
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *
1
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
As
C
C
V
Nm
*
1
Recommendable value : 1.3 to 1.7 Nm (M4)
Electrical characteristics (Tj=25C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
Con
v
e
r
t
er
B
r
a
k
e
Br
a
k
e (IGBT) In
v
e
r
ter (IGBT)
(FWD)
I
CES
I
GES
V
GE(th)
V
CE(sat)
-V
CE
C
ies
t
on
t
r
t
off
t
f
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
t
rr
V
FM
I
RRM
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=15mA
V
GE
=15V, Ic=15A
-Ic=15A
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=15A
V
GE
=15V
R
G
=82 ohm
I
F
=15A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=20V
I
C
=10A, V
GE
=15V
V
CC
=600V
I
C
=10A
V
GE
=15V
R
G
=120 ohm
V
R
=1200V
I
F
=25A
V
R
=1600V
1.0
20
7.5
3.3
3.0
1.2
0.6
1.5
0.5
0.35
1.0
0.1
3.3
0.8
0.6
1.5
0.5
1
0.6
1.4
1.0
2400
4.5
mA
A
V
V
V
pF
s
s
s
s
s
mA
A
V
s
s
s
s
mA
s
V
mA
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
1.04
2.78
1.43 C/W
3.40
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal Characteristics
IGBT Module
7MBR15NE120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*
NLU (Over current Limiting circuit)
IGBT Module
7MBR15NE120
Collector current vs. Collector-Emitter voltage
Tj=25C
Collector current vs. Collector-Emitter voltage
Tj=125C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125C
Switching time vs. Collector current
Vcc=600V, RG=82 ohm, VGE=15V, Tj=25C
Switching time vs. Collector current
Vcc=600V, RG=82 ohm, VGE=15V, Tj=125C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
20
10
0
0
0 1 2 3 4 5
0 1 2 3 4 5
Collector-Emitter v
oltage :
VCE [V]
Collector-Emitter v
oltage :
VCE [V]
10
8
6
4
2
0
0 5 10 15 20 25
0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time :
ton, tr
, toff
, tf [n sec.]
1000
100
10
0 10 20 30
Collector current : Ic [A]
Collector current : Ic [A]
Switching time :
ton, tr
, toff
, tf [n sec.]
1000
100
10
20
10
30
30
0 10 20 30
Characteristics (Representative)
Inverter
IGBT Module
7MBR15NE120
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=15V, Tj=25C
Dynamic input characteristics
Tj=25C
Gate resistance : RG [ohm]
100
Gate charge : Qg [nC]
0 50 100 150 200 250 300
100
1000
1000
800
600
400
200
0
Switching time :
ton, tr
, toff
, tf [n sec.]
Collector-Emitter v
o
ltage :
VCE [V]
F
orward current :
IF [A]
20
10
0
0 1 2 3 4 5
Gate-Emitter v
oltage :
V
GE [V]
0
5
15
20
25
Forward voltage : VF [V]
Re
v
erse reco
v
e
r
y
current :
Irr [A]
Re
v
erse reco
v
e
r
y
time :
trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
10
100
1
Ther
mal resistance :
Rth (j-c) [C/W]
Transient thermal resistance
0.1
1
0.001 0.01 0.1 1
Pulse width : PW [sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125C, RG = 82 ohm
0 5 10 15 20
<
<
>
100
80
60
40
20
0
0 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
10
30
0.01
120
140
IGBT Module
7MBR15NE120
Switching loss vs. Collector current
Vcc=600V, RG=82 ohm, VGE=15V
Switching loss :
Eon, Eoff
, Err [mJ /cycle]
Collector current : Ic [A]
0
2
1
3
4
0 5 10 15 20 25 30
Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 30 35
0.1
1
10
Capacitance :
Cies, Coes
, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25C
F
orward current :
IF [A]
30
25
20
15
10
5
0
0 0.5 1.0 1.5 2.0
Forward voltage : VF [V]
Converter Diode
Forward current vs. Forward voltage
5
6
IGBT Module
7MBR15NE120
Collector current vs. Collector-Emitter voltage
Tj=25C
Collector current vs. Collector-Emitter voltage
Tj=125C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125C
Switching time vs. Collector current
Vcc=600V, RG=120 ohm, VGE=15V, Tj=25C
Switching time vs. Collector current
Vcc=600V, RG=120 ohm, VGE=15V, Tj=125C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
25
20
15
10
5
0
0
0 1 2 3 4 5
0 1 2 3 4 5
Collector-Emitter v
oltage :
VCE [V]
Collector-Emitter v
oltage :
VCE [V]
10
8
6
4
2
0
0 5 10 15 20 25
0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time :
ton, tr
, toff
, tf [n sec.]
1000
100
10
0 5 10 15 20
Collector current : Ic [A]
Collector current : Ic [A]
Switching time :
ton, tr
, toff
, tf [n sec.]
1000
100
10
25
20
15
10
5
Brake
0 5 10 15 20
IGBT Module
7MBR15NE120
Switching loss vs. Collector current
Vcc=600V, RG=120 ohm, VGE=15V
Switching loss :
Eon, Eoff
, Err [mJ /cycle]
Collector current : Ic [A]
0
1
0 5 10 15 20
Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 30 35
0.1
1
Capacitance :
Cies, Coes
, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25C
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=15V, Tj=25C
Dynamic input characteristics
Tj=25C
Gate resistance : RG [ohm]
Gate charge : Qg [nC]
0 50 100 150 200
100
1000
1000
800
600
400
200
0
Switching time :
ton, tr
, toff
, tf [n sec.]
Collector-Emitter v
oltage :
VCE [V]
Gate-Emitter v
oltage :
V
GE [V]
0
5
10
15
20
25
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125C, RG = 120 ohm
<
<
>
100
80
60
40
20
0
0 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
100
1000
2
3
4
10
IGBT Module
7MBR15NE120
Outline Drawings, mm
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-733-1700
972-381-9991 Fax
http://www.collmer.com