7MBR35SD120
IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 35A / PIM
Features
Low V
CE
(sat)
Compact Package
P.C. Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t (Non-Repetitive)
Converter Thyristor Brake Inverter
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
DRM
V
RRM
I
T(AV)
I
TSM
T
jw
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Continuous Tc=25C
Tc=80C
1ms Tc=25C
Tc=80C
1 device
Continuous Tc=25C
Tc=80C
1ms Tc=25C
Tc=80C
1 device
50Hz/60Hz sine wave
Tj=125C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150C, 10ms
half sine wave
AC : 1 minute
1200
20
50
35
100
70
35
240
1200
20
35
25
70
50
180
1200
1600
1600
35
390
125
1600
35
360
648
+150
-40 to +125
AC 2500
AC 2500
1.7 *
1
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
C
V
A
A
A
2
s
C
C
V
V
Nm
*1
Recommendable value : 1.3 to 1.7 Nm (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
IGBT Module
7MBR35SD120
Electrical characteristics (Tj=25C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thyristor Converter
Thyristor Brake Inverter
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
I
DM
I
RRM
I
GT
V
GT
V
TM
V
FM
I
RRM
R
B
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=35mA
V
GE
=15V, Ic=35A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=35A
V
GE
=15V
R
G
=33
I
F
=35A chip
terminal
I
F
=35A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=20V
I
C
=25A, V
GE
=15V chip
terminal
V
CC
=600V
I
C
=25A
V
GE
=15V
R
G
=51
V
R
=1200V
V
DM
=1600V
V
RM
=1600V
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
I
TM
=35A chip
terminal
I
F
=35A chip
terminal
V
R
=1600V
T=25C
T=100C
T=25/50C
200
200
8.5
2.7
1.2
0.6
1.0
0.3
3.3
350
200
200
2.7
1.2
0.6
1.0
0.3
200
1.0
1.0
100
2.5
1.2
1.5
200
4200
5.5 7.2
A
nA
V
V
pF
s
V
ns
A
nA
V
s
A
mA
mA
mA
V
V
V
A
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.52
0.90
0.69
1.00 C/W
0.75
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
* This is the value which is defined mounting on the additional cooling fin with thermal compound
2.1
2.25
0.35
0.25
0.45
0.08
2.3
2.45
2.1
2.25
0.35
0.25
0.45
0.08
1.1
1.2
1.1
1.2
5000
465 495 520
3305 3375 3450
IGBT Module
7MBR35SD120
Characteristics (Representative)
0
1
2
3
4
5
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
:
I
c
[
A
]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
:
I
c
[
A
]
0
1
2
3
4
5
0
20
40
60
80
Tj= 25C
Tj= 125C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
C
o
l
l
e
c
to
r
c
u
r
r
e
n
t
:
I
c
[
A
]
5
10
15
20
25
0
2
4
6
8
10
Ic= 17.5A
Ic= 35A
Ic= 70A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
C
o
lle
c
t
or
-
E
m
itt
e
r
v
o
ltag
e
:
V
C
E
[ V
]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
C
a
pa
c
i
ta
nc
e
:
C
i
e
s
,
C
o
e
s
,
C
r
e
s
[
pF
]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
100
200
300
400
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25C
Gate charge : Qg [ nC ]
C
o
lle
c
t
or
-
E
m
itt
e
r
v
o
ltag
e
:
V
C
E
[ V
]
0
5
10
15
20
25
Ga
t
e
-
E
m
i
t
te
r
v
o
l
t
a
g
e
:
V
G
E
[ V
]
IGBT Module
7MBR35SD120
0
20
40
60
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg= 33
, Tj= 25C
S
w
it
c
h
in
g
tim
e
:
t
o
n
,
tr, tof
f
,
tf
[
n
s
e
c
]
Collector current : Ic [ A ]
0
20
40
60
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg= 33
, Tj= 125C
Collector current : Ic [ A ]
S
w
it
c
h
in
g
tim
e
:
t
o
n
,
tr, tof
f
,
tf
[
n
s
e
c
]
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=15V, Tj= 25C
Gate resistance : Rg [
]
S
w
it
c
h
in
g
tim
e
:
t
o
n
,
tr, tof
f
,
tf
[
n
s
e
c
]
0
20
40
60
0
2
4
6
8
10
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=33
Sw
i
t
c
h
i
ng
l
o
s
s
:
Eo
n, Eo
f
f
,
Er
r
[ m
J
/pul
s
e
]
Collector current : Ic [ A ]
10
50
100
500
0
5
10
15
20
25
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=15V, Tj= 125C
Sw
i
t
c
h
i
ng
l
o
s
s
:
Eo
n, Eo
f
f
,
Er
r
[ m
J
/pul
s
e
]
Gate resistance : Rg [
]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=33
, Tj<=125C
Collector - Emitter voltage : VCE [ V ]
C
o
lle
c
t
or
c
u
rr
en
t : Ic
[
A
]
IGBT Module
7MBR35SD120
0
1
2
3
4
0
20
40
60
80
0.0
0.4
0.8
1.2
1.6
2.0
2
10
100
Tj=25C
Tj=125C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
For
w
ar
d
c
u
rr
en
t : IF
[
A
]
Forward on voltage : VF [ V ]
0
10
20
30
40
50
60
10
100
300
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=15V, Rg=33
Forward current : IF [ A ]
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
c
u
r
r
e
n
t
:
Ir
r
[ A
]
R
e
v
e
r
s
e
r
e
c
o
v
e
ry
t
i
m
e
: trr
[ n
s
e
c
]
0.0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
Tj= 25C
Tj= 125C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
For
w
ar
d
c
u
rr
en
t : IF
[
A
]
0.001
0.01
0.1
1
0.01
0.1
1
5
Thyristor
Conv. Diode
Transient thermal resistance
T
h
e
r
m
a
l
r
e
s
i
s
t
a
n
s
e
:
R
t
h
(
j
-
c
)
[
C
/W
]
Pulse width : Pw [ sec ]
FWD[Inverter]
IGBT[Brake]
IGBT[Inverter]
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ C ]
R
e
si
st
a
n
ce
:
R
[
k
]
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
Tjw= 125C
Tjw= 25C
Ins
t
a
n
ta
n
e
o
u
s
o
n
-
s
ta
te
c
u
r
r
e
n
t
[
A ]
Instantaneous on-state voltage [ V ]
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