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Электронный компонент: 7MBR50SB140

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7MBR50SB140
IGBT Modules
Applications
Inverter for Motoe Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t (Non-Repetitive)
Converter Brake Inverter
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Continuous Tc=25C
Tc=75C
1ms
Tc=25C
Tc=75C
1 device
Continuous Tc=25C
Tc=75C
1ms
Tc=25C
Tc=75C
1 device
50Hz/60Hz sine wave
Tj=150C, 10ms
half sine wave
AC : 1 minute
1400
20
75
50
150
100
50
360
1400
20
35
25
70
50
180
1400
1600
50
520
1352
+150
-40 to +125
AC 2500
AC 2500
3.5 *
1
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
2
s
C
C
V
Nm
*1
Recommendable value : 2.5 to 3.5 Nm (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT MODULE (S series)
1400V / 50A / PIM
Features
Low V
CE
(sat)
Compact Package
P.C. Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
Electrical characteristics (Tj=25C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Converter
Brake Inverter
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
V
FM
I
RRM
R
B
V
CE
=1400V, V
GE
=0V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=50mA
V
GE
=15V, Ic=50A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=800V
I
C
=50A
V
GE
=15V
R
G
=24
I
F
=50A chip
terminal
I
F
=50A
V
CES
=1400V, V
GE
=0V
V
CE
=0V, V
GE
=20V
I
C
=25A, V
GE
=15V chip
terminal
V
CC
=800V
I
C
=25A
V
GE
=15V
R
G
=51
V
R
=1400V
I
F
=50A chip
terminal
V
R
=1600V
T=25C
T=100C
T=25/50C
1.0
0.2
8.5
2.8
1.2
0.6
1.0
0.3
3.4
0.35
1.0
0.2
2.8
1.2
0.6
1.0
0.3
1.0
1.5
1.0
6000
5.5 7.2
mA
A
V
V
pF
s
V
s
mA
A
V
s
mA
V
mA
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
0.35
0.75
0.69 C/W
0.50
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module
7MBR50SB140
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
2.2
2.4
0.35
0.25
0.1
0.45
0.08
2.4
2.6
2.2
2.35
0.35
0.25
0.45
0.08
1.1
1.2
5000
465 495 520
3305 3375 3450
[Converter]
21(P)
23(N)
1(R)
2(S)
3(T)
[Brake]
[Inverter]
22(P1)
7(B)
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
17(Ev)
4(U)
12(Gy)
5(V)
6(W)
16(Gw)
11(Gz)
10(En)
15(Ew)
8
9
[Thermistor]
IGBT Module
7MBR50SB140
Characteristics (Representative)
0
1
2
3
4
5
0
20
40
60
80
100
120
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
20
40
60
80
100
120
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
20
40
60
80
100
120
Tj= 25C
Tj= 125C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic= 25A
Ic= 50A
Ic= 100A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
20000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
100
200
300
400
500
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=50A, Tj= 25C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR50SB140
0
20
40
60
80
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=15V, Rg= 24 ohm, Tj= 25C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0
20
40
60
80
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=15V, Rg= 24 ohm, Tj= 125C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=50A, VGE=15V, Tj= 25C
Gate resistance : Rg [ ohm ]
Switching time : ton, tr, toff, tf [ nsec ]
0
20
40
60
80
100
0
2
4
6
8
10
12
14
16
18
20
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=800V, VGE=15V, Rg=24 ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10
50
100
500
0
10
20
30
40
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=800V, Ic=50A, VGE=15V, Tj= 125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
1600
0
20
40
60
80
100
120
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>24 ohm, Tj=<125C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
IGBT Module
7MBR50SB140
0
1
2
3
4
0
20
40
60
80
100
120
Tj=25C
Tj=125C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0
20
40
60
80
10
100
300
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=800V, VGE=15V, Rg=24 ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
120
Tj= 25C
Tj= 125C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
Forward current : IF [ A ]
0.001
0.01
0.1
1
0.01
0.1
1
3
IGBT[Brake]
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ C/W ]
Pulse width : Pw [ sec ]
FWD[Inverter]
Conv. Diode
IGBT[Inverter]
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ C ]
Resistance : R [ k ohm ]
IGBT Module
7MBR50SB140
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
10
20
30
40
50
60
Tj= 25C
Tj= 125C
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic= 12.5A
Ic= 25A
Ic= 50A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
50
100
150
200
250
0
200
400
600
800
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=25A, Tj= 25C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR50SB140
Outline Drawings, mm
mass : 260g