1MBI 300S-120
1-Pack IGBT
1200V
1x300A
IGBT MODULE ( S-Series )
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I
I
I Features
NPT-Technology
Square SC SOA at 10 x I
C
High Short Circuit Withstand-Capability
Small Temperature Dependence of the Turn-Off
Switching Loss
Low Losses And Soft Switching
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I
I
I Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
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I
I
I Outline Drawing
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I
I
I Maximum Ratings and Characteristics
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I
I
I Equivalent Circuit
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
Gate -Emitter Voltage
V
GES
20
V
Continuous
25C / 80C
I
C
400 / 300
Collector
1ms
25C / 80C
I
C PULSE
800 / 600
Current
Continuous
-I
C
300
1ms
-I
C PULSE
600
A
Max. Power Dissipation
P
C
2100
W
Operating Temperature
T
j
+150
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
*
1
A.C. 1min.
V
is
2500
V
Mounting *
2
3.5
Terminals *
2
4.5
Screw Torque
Terminals *
2
1.7
Nm
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value: Mounting 2.5
3.5 Nm (M5) or (M6) ; Terminal 3.5 4.5 Nm (M6), 1.3 1.7 Nm (M4)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
4.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
800
nA
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=300mA
5.5
7.2
8.5
T
j
= 25C
2.3
2.6
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=300A
T
j
=125C
2.8
Input Capacitance
C
ies
V
GE
=0V
36'000
Output Capacitance
C
oes
V
CE
=10V
7'500
pF
Reverse Transfer Capacitance
C
res
f=1MHz
6'600
t
ON
V
CC
= 600V
0.35
1.2
Turn-on Time
t
r,x
I
C
= 300A
0.25
0.6
t
r,i
V
GE
=
15V
0.10
t
OFF
R
G
= 2.7
0.45
1.0
Turn-off Time
t
f
Inductive Load
0.08
0.3
s
T
j
= 25C
2.3
3.0
Diode Forward On-Voltage
V
F
I
F
=300A; V
GE
=0V
T
j
=125C
2.0
V
Reverse Recovery Time
t
rr
I
F
=300A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.06
Thermal Resistance
R
th(j-c)
Diode
0.17
C/W
R
th(c-f)
With Thermal Compound
0.0125
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