FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
max
.
.004 (
0
.1)
.112 (
2
.85)
.152
(
3
.8
5)
.067 (1.70)
m
a
x
.
.05
3
(
1
.
35)
min. .010 (0.25)
Cathode Mark
max
.
.006 (
0
.15)
Top View
.140
(
3
.5
5)
.100 (
2
.55)
.055 (1.40)
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
4/98
1N4448W
Symbol
Value
Unit
Reverse Voltage
V
R
75
V
Peak Reverse Voltage
V
RM
100
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 C and f
50 Hz
I
0
150
1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 C
I
FSM
500
mA
Power Dissipation at T
amb
= 25 C
P
tot
500
1)
mW
Junction Temperature
T
j
175
C
Storage Temperature Range
T
S
65 to +175
C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other case styles including:
the DO-35 case with the type designation 1N4448, the
MiniMELF case with the type designation LL4448, and
the SOT23 case with the type designation IMBD4448.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
1N4448W
Rectification Efficiency Measurement Circuit
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at I
F
= 5 mA
at I
F
= 10 mA
V
F
V
F
0.62
0.72
1
V
V
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150 C
I
R
I
R
I
R
25
5
50
nA
A
A
Reverse Breakdown Voltage
tested with 100
A Pulses
V
(BR)R
100
V
Capacitance
at V
F
= V
R
= 0 V
C
tot
4
pF
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
t
rr
4
ns
Thermal Resistance Junction to Ambient Air
R
thJA
350
1)
K/W
Recification Efficiency at f = 100 MHz, V
RF
= 2 V
v
0.45
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
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