10/6/00
1N5711 and 1N6263
Schottky Diodes
Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low
logic level applications.
This diode is also available in the MiniMELF case
with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13" reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak Inverse Voltage
1N5711
V
RRM
70
V
1N6263
60
Power Dissipation (Infinite Heatsink)
P
tot
400
(1)
mW
Maximum Single Cycle Surge 10
s Square Wave
I
FSM
2.0
A
Thermal Resistance Junction to Ambient Air
R
JA
0.3
(1)
C/mW
Junction Temperature
T
j
125
(1)
C
Storage Temperature Range
T
S
55 to +150
(1)
C
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
1N5711
V
(BR)R
I
R =
10
A
70
--
--
V
1N6263
60
--
--
Leakage Current
I
R
V
R
= 50V
--
--
200
nA
Forward Voltage Drop
V
F
I
F
= 1mA
--
--
0.41
V
I
F
= 15mA
--
--
1.0
Junction Capacitance
C
tot
V
R
= 0V, f = 1MHz
--
--
2.2
pF
Reverse Recovery Time
t
rr
I
F
= I
R
= 5mA,
--
--
1
ns
recover to 0.1I
R
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
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