1N914
SMALL SIGNAL DIODE
FEATURES
Silicon Epitaxial Planar Diode
For general purpose and switching.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Peak Reverse Voltage
V
RM
100
V
Maximum Average Rectified Current
I
o
75
mA
Maximum Power Dissipation at T
amb
= 25 C
P
tot
500
mW
Maximum Junction Temperature
T
j
200
C
Maximum Forward Voltage Drop at I
F
= 10 mA
V
F
1.0
V
Maximum Reverse Current at V
R
= 20 V
I
R
25
nA
V
R
= 75 V
5.0
A
Max. Reverse Recovery Time at I
F
= I
R
= 10 mA, V
R
= 6 V,
R
L
= 100
, to I
rr
= 1 mA
t
rr
4.0
ns
Maximum Capacitance at V
R
=0, f=1.0 MH
Z
C
tot
4.0
pF
11/09/98
Dimensions in inches and (millimeters)
DO-35
m
in.
1.
083 (27.
5)
m
in.
1.
083 (27.
5)
m
a
x
.
.
150 (3.
8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
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