2N3904
SMALL SIGNAL TRANSISTORS (NPN)
FEATURES
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP transistor
2N3906 is recommended.
On special request, this transistor is also
manufactured in the pin configuration
TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT3904.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
200
mA
Power Dissipation at T
A
= 25C
P
tot
625
mW
at T
C
= 25C
1.5
W
Thermal Resistance Junction to Ambient Air
R
qJA
250
(1)
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
E
C
B
TO-92
1/5/99
Dimensions in inches and (millimeters)
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
mA, I
E
= 0
V
(BR)CBO
60
V
Collector-Emitter Breakdown Voltage
at I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
V
Emitter-Base Breakdown Voltage
at I
E
= 10
mA, I
C
= 0
V
(BR)EBO
6
V
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
V
CEsat
0.2
V
at I
C
= 50 mA, I
B
= 5 mA
V
CEsat
0.3
V
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
V
BEsat
0.85
V
at I
C
= 50 mA, I
B
= 5 mA
V
BEsat
0.95
V
Collector-Emitter Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
I
CEV
50
nA
Emitter-Base Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
I
EBV
50
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
h
FE
40
at V
CE
= 1 V, I
C
= 1 mA
h
FE
70
at V
CE
= 1 V, I
C
= 10 mA
h
FE
100
300
at V
CE
= 1 V, I
C
= 50 mA
h
FE
60
at V
CE
= 1 V, I
C
= 100 mA
h
FE
30
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
1
10
k
W
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
0.5 10
4
8 10
4
Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
f
T
300
MHz
Collector-Base Capacitance
at V
CB
= 5 V, f = 100 kHz
C
CBO
4
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 100 kHz
C
EBO
8
pF
2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
fe
100
400
Output Admittance
at V
CE
= 1 V, I
C
= 1 mA, f = 1 kHz
h
oe
1
40
mS
Noise Figure
at V
CE
= 5 V, I
C
= 100
mA, R
G
= 1 k
W,
f = 10 15000 Hz
NF
5
dB
Delay Time (see Fig. 1)
at I
B1
= 1 mA, I
C
= 10 mA
t
d
35
ns
Rise Time (see Fig. 1)
at I
B1
= 1 mA, I
C
= 10 mA
t
r
35
ns
Storage Time (see Fig. 2)
at I
B1
= I
B2
= 1 mA, I
C
= 10 mA
t
s
200
ns
Fall Time (see Fig. 2)
at I
B1
= I
B2
= 1 mA, I
C
= 10 mA
t
f
50
ns
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
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