2N3906
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor
2N3904 is recommended.
On special request, this transistor is also
manufactured in the pin configuration
TO-18.
This transistor is also available in the SOT-23 case with
the type designation MMBT3906.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
40
Volts
Collector-Emitter Voltage
V
CEO
40
Volts
Emitter-Base Voltage
V
EBO
5.0
Volts
Collector Current
I
C
200
mA
Power Dissipation at T
A
= 25C
P
tot
625
mW
at T
C
= 25C
1.5
Watts
Thermal Resistance Junction to Ambient Air
R
qJA
250
(1)
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
E
C
B
TO-92
1/5/99
Dimensions in inches and (millimeters)
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
mA, I
E
= 0
V
(BR)CBO
40
Volts
Collector-Emitter Breakdown Voltage
at I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
Volts
Emitter-Base Breakdown Voltage
at I
E
= 10
mA, I
C
= 0
V
(BR)EBO
5
Volts
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
V
CEsat
0.25
Volts
at I
C
= 50 mA, I
B
= 5 mA
V
CEsat
0.4
Volts
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
V
BEsat
0.85
Volts
at I
C
= 50 mA, I
B
= 5 mA
V
BEsat
0.95
Volts
Collector-Emitter Cutoff Current
at V
EB
= 3 V, V
CE
= 30 V
I
CEV
50
nA
Emitter-Base Cutoff Current
at V
EB
= 3 V, V
CE
= 30 V
I
EBV
50
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
h
FE
60
at V
CE
= 1 V, I
C
= 1 mA
h
FE
80
at V
CE
= 1 V, I
C
= 10 mA
h
FE
100
300
at V
CE
= 1 V, I
C
= 50 mA
h
FE
60
at V
CE
= 1 V, I
C
= 100 mA
h
FE
30
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
1
10
k
W
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
0.5 10
4
8 10
4
Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
f
T
250
MHz
Collector-Base Capacitance
at V
CB
= 5 V, f = 100 kHz
C
CBO
4.5
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 100 kHz
C
EBO
10
pF
2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at V
CE
= 10 V, IC = 1 mA, f = 1 kHz
h
fe
100
400
Output Admittance
at V
CE
= 1 V, I
C
= 1 mA, f = 1 kHz
h
oe
1
40
mS
Noise Figure
at V
CE
= 5 V, I
C
= 100
mA, R
G
= 1 k
W,
f = 10 15000 Hz
NF
4
dB
Delay Time (see Fig. 1)
at I
B1
= 1 mA, I
C
= 10 mA
t
d
35
ns
Rise Time (see Fig. 1)
at I
B1
= 1 mA, I
C
= 10 mA
t
r
35
ns
Storage Time (see Fig. 2)
at I
B1
= I
B2
= 1 mA, I
C
= 10 mA
t
s
225
ns
Fall Time (see Fig. 2)
at I
B1
= I
B2
= 1 mA, I
C
= 10 mA
t
f
75
ns
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
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