FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistors (PNP)
B
C
E
.181 (4.6)
mi
n. .492
(
12.5)
.181 (
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 C
ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
2N4126
PNP Silicon Epitaxial Transistor
for switching and amplifier applications.
Especially suit-able for AF-driver and
low-power output stages.
As complementary type, the NPN tran-
sistor 2N4124 is recommended.
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
25
V
Collector-Base Voltage
V
CBO
25
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
200
mA
Peak Collector Current
I
CM
800
mA
Base Current
I
B
50
mA
Power Dissipation at T
amb
= 25 C
P
tot
625
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
2N4126
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 2.0 mA
at V
CE
= 1 V, I
C
= 50 mA
h
FE
h
FE
120
60
360
Collector Cutoff Current
at V
CB
= 20 V
I
CBO
50
nA
Emitter Cutoff Current
at V
EB
= 3 V
I
EBO
50
nA
Collector Saturation Voltage
at I
C
= 50 mA, I
B
= 5 mA
V
CESAT
0.4
V
Base Saturation Voltage
at I
C
= 50 mA, I
B
= 5 mA
V
BESAT
0.95
V
Collector-Emitter Breakdown Voltage
at I
C
= 1 mA
V
(BR)CEO
25
V
Collector-Base Breakdown Voltage
at I
C
= 10
A
V
(BR)CBO
25
V
Emitter-Base Breakdown Voltage
at I
E
= 10
A
V
(BR)EBO
4
V
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
f
T
200
MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MHz
C
CBO
12
pF
Thermal Resistance Junction to Ambient Air
R
thJA
200
1)
K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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