FEATURES
Schottky Diodes
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
max
.
.004
(
0
.1)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.
007 (
0
.175)
.045 (
1
.15)
.118 (3.0)
.052
(
1
.33
)
.005 (
0
.125)
.094 (2.4)
.037 (
0
.95)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 C
ambient temperature unless otherwise specified
SOT-23
4/98
BAS70
1
3
2
Top View
1
3
2
BAS70-04
Marking: 73
Marking: 74
1
3
2
Top View
1
3
2
BAS70-05 BAS70-06
Marking: 75
Marking: 76
BAS70 THRU BAS70-06
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
70
V
Forward Continuous Current at T
amb
= 25 C
I
F
200
1)
mA
Surge Forward Current at t
p
< 1 s, T
amb
= 25 C
I
FSM
600
1)
mA
Power Dissipation
1)
at T
amb
= 25 C
P
tot
200
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
1)
Device on fiberglass substrate, see layout
These diodes feature very low turn-on
voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic dis-
charges.
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 C
ambient temperature unless otherwise specified
BAS70 THRU BAS70-06
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
Tested with 10
A Pulses
V
(BR)R
70
V
Leakage Current
Pulse Test t
p
< 300
s
at V
R
= 50 V
I
R
20
100
nA
Forward Voltage
Pulse Test t
p
< 300
s
at I
F
= 1 mA
at I
F
= 15 mA
V
F
V
F
410
1000
mV
mV
Capacitance
at V
R
= 0 V, f = 1 MHz
C
tot
1.5
2
pF
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA
t
rr
5
ns
Thermal Resistance Junction to Ambient Air
R
thJA
430
1)
K/W
1)
Device on fiberglass substrate, see layout
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
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