FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)
Cathode Mark
.063
(
1
.6)
.134 (3.4)
.055
(
1
.4
)
.011 (0.28)
4/98
LL101A THRU LL101C
Symbol
Value
Unit
Peak Inverse Voltage
LL101A
LL101B
LL101C
V
RRM
V
RRM
V
RRM
60
50
40
V
V
V
Power Dissipation (Infinite Heatsink)
P
tot
400
1)
mW
Max. Single Cycle Surge
10
s Square Wave
I
FSM
2
A
Junction Temperature
T
j
125
C
Storage Temperature Range
T
S
55 to +150
C
1)
Valid provided that electrodes are kept at ambient temperature.
For general purpose applications.
The LL101 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the DO-35 case with type
designation SD101A, B, C, and in the SOD-123 case
with type designation SD101AW, SD101BW, SD101CW.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
LL101A THRU LL101C
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at I
R
= 10
A
LL101A
LL101B
LL101C
V
(BR)R
V
(BR)R
V
(BR)R
60
50
40
V
V
V
Leakage Current
at V
R
= 50 V
LL101A
at V
R
= 40 V
LL101B
at V
R
= 30 V
LL101C
I
R
I
R
I
R
200
200
200
nA
nA
nA
Forward Voltage Drop
at I
F
= 1 mA
LL101A
LL101B
LL101C
at I
F
= 15 mA
LL101A
LL101B
LL101C
V
F
V
F
V
F
V
F
V
F
V
F
0.41
0.4
0.39
1
0.95
0.9
V
V
V
V
V
V
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
LL101A
LL101B
LL101C
C
tot
C
tot
C
tot
2.0
2.1
2.2
pF
pF
pF
Reverse Recovery Time
at I
F
= I
R
= 5 mA, recover to 0.1 I
R
t
rr
1
ns
RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C
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