FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Case: MiniMELF Glass Case SOD-80C
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)
Cathode Mark
.063
(
1
.6)
.134 (3.4)
.055
(
1
.4
)
.011 (0.28)
4/98
LL103A THRU LL103C
Symbol
Value
Unit
Peak Inverse Voltage
LL103A
LL103B
LL103C
V
RRM
V
RRM
V
RRM
40
30
20
V
V
V
Power Dissipation (Infinite Heatsink)
T
C
=
3
/
8
from Body
derates at 4 mW/C to 0 at 125 C
P
tot
400
1)
mW
Junction Temperature
T
j
125
C
Storage Temperature Range
T
S
55 to +150
C
Single Cycle Surge
60-Hz Sine Wave
I
FSM
15
A
1)
Valid provided that electrodes are kept at ambient temperature.
For general purpose applications.
The LL103A, B, C is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring.
The low forward voltage drop and fast switch-
ing make it ideal for protection of MOS devices,
steering, biasing and coupling diodes
for fast switching and low logic level applications.
Other applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
This diode is also available in DO-35 case with
the type designation SD103A, B, C, and in the
SOD-123 case with type designation
SD103AW, SD103BW, SD103CW.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
LL103A THRU LL103C
Symbol
Min.
Typ.
Max.
Unit
Leakage Current
at V
R
= 30 V
LL103A
at V
R
= 20 V
LL103B
at V
R
= 10 V
LL103C
I
R
I
R
I
R
5
5
5
A
A
A
Forward Voltage Drop
at I
F
= 20 mA
at I
F
= 200 mA
V
F
V
F
0.37
0.6
V
V
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
C
tot
50
pF
Reverse Recovery Time
at I
F
= I
R
= 50 mA to 200 mA, recover to 0.1 I
R
t
rr
10
ns
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
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