MBR7xx, MBRF7xx & MBRB7xx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88680
www.vishay.com
03-Mar-03
1
Schottky Barrier Rectifier
Reverse Voltage 35 to 60V
Forward Current 7.5A
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
1
2
PIN
DIA.
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (MBRF7xx)
TO-220AC (MBR7xx)
Dimensions in inches
and (millimeters)
TO-263AB (MBRB7xx)
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
1
2
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2
CASE
0.370 (9.40)
0.360 (9.14)
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
Features
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
250C/10 seconds, 0.25" (6.35mm) from case
MBR7xx, MBRF7xx & MBRB7xx Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88680
2
03-Mar-03
Maximum Ratings
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
MBR735
MBR745
MBR750
MBR760
Unit
Maximum repetitive peak reverse voltage
V
RRM
35
45
50
60
V
Working peak reverse voltage
V
RWM
35
45
50
60
V
Maximum DC blocking voltage
V
DC
35
45
50
60
V
Maximum average forward rectified current
(SEE FIG. 1)
I
F(AV)
7.5
A
Peak repetitive forward current (sq. wave, 20 KHz)
at T
C
= 105C
I
FRM
15
A
Peak forward surge current
8.3ms single half sine-wave superimposed
I
FSM
150
A
on rated load (JEDEC Method)
Peak repetitive reverse current
at t
p
= 2.0
s, 1KH
Z
I
RRM
1.0
0.5
A
Voltage rate of change (rated V
R
)
dv/dt
10,000
V/
s
Operating junction temperature range
T
J
65 to +150
C
Storage temperature range
T
STG
65 to +175
C
RMS Isolation voltage (MBRF type only) from terminals to
4500
(NOTE 1)
heatsink with t = 1.0 second, RH
30%
V
ISOL
3500
(NOTE 2)
V
1500
(NOTE 3)
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
MBR735
MBR745
MBR750
MBR760
Unit
Maximum instantaneous forward voltage
(Note 4)
at I
F
= 7.5A,
T
C
= 25C
0.75
at I
F
= 7.5A,
T
C
= 125C
V
F
0.57
0.65
V
at I
F
= 15A,
T
C
= 25C
0.84
at I
F
= 15A,
T
C
= 125C
0.72
Maximum reverse current
T
C
= 25C
0.1
0.5
at DC blocking voltage
T
C
= 125C
I
R
15
50
mA
Thermal Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Thermal resistance from junction to case
R
JC
3.0
5.0
3.0
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19")
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR735 - MBR760
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
MBRF735 - MBRF760
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
13" reel, 800/reel, 4.8K/carton
MBRB735 - MBRB760
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13" reel, 800/reel, 4.8K/carton
MBR7xx, MBRF7xx & MBRB7xx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88680
www.vishay.com
03-Mar-03
3
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Case Temperature (
C)
Fig. 1 Forward Current
Derating Curve
A
verage Forward Current (A)
Fig. 3 Typical Instantaneous
Forward Characteristics
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
Fig. 4 Typical Reverse
Characteristics
Fig. 6 Typical Transient Thermal
Impedance
1
10
100
50
25
75
100
125
150
175
Number of Cycles at 60 H
Z
t, Pulse Duration (sec.)
Fig. 2 Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
50
T
J
= 125
C
T
J
= 25
C
Pulse Width = 300
s
1% Duty Cycle
0
20
40
60
80
100
0.001
0.01
0.1
1
10
50
MBR735 - MBR745
MBR750 & MBR760
T
J
= 25
C
T
J
= 75
C
T
J
= 125
C
0.1
1
10
100
40
100
1,000
4,000
Reverse Voltage (V)
Junction Capacitance (pF)
T
ransient
Thermal Impedance (
CW)
Fig. 5 Typical Junction
Capacitance
T
J
= 25
C
f = 1.0MH
Z
Vsig = 50MVp-p
0.01
0.1
1
10
100
0.1
1
10
100
0
50
100
150
0
2
4
6
8
10
Resistive or Inductive Load
MBR735 - MBR745
MBR750 & MBR760
MBR735 - MBR745
MBR750 & MBR760
MBR735 - MBR745
MBR750 & MBR760
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