P4SMA Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88367
www.vishay.com
09-Oct-02
1
Surface Mount T
RANS
Z
ORB
Transient Voltage Suppressors
V
(BR)
Unidirectional
6.8 to 540V
V
(BR)
Bidirectional
6.8 to 220V
Peak Pulse Power 400W
Extended
Voltage Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak power dissipation with a 10/1000
s waveform
(1)(2)
(Fig. 1)
P
PPM
400
W
Peak pulse current with a 10/1000
s waveform
(1)
(Fig. 3)
I
PPM
See Next Table
A
Power dissipation on infinite heatsink, T
A
= 50C
P
M(AV)
1.0
W
Peak forward surge current 8.3ms single half sine-wave
I
FSM
40
A
uni-directional only
(2)
Thermal resistance junction to ambient air
(3)
R
JA
120
C/W
Thermal resistance junction to leads
R
JL
30
C/W
Operating junction and storage temperature range
T
J
, T
STG
65 to +150
C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25C per Fig. 2. Rating is 300W above 91V.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AC
(SMA)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accordance with
IEC1000-4-4 (IEC801-4)
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
400W peak pulse power capability with a 10/1000
s wave-
form, repetition rate (duty cycle): 0.01% (300W above 91V)
Very Fast response time
Mechanical Data
Case: JEDEC DO-214AC molded plastic over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250C/10 seconds at terminals.
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Mounting Position: Any Weight: 0.002 oz., 0.064 g
Packaging Codes Options (Antistatic):
51 1K per Bulk box, 20K/carton
61 1.8K per 7" plastic Reel (12mm tape), 36K/carton
5A 7.5K per 13" plastic Reel (12mm tape), 75K/carton
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
P4SMA Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88367
www.vishay.com
09-Oct-02
3
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
T
A
-- Ambient Temperature (
C)
1
5
10
50
100
t
p
-- Pulse Duration (sec)
Fig. 2 Pulse Derating Curve
P
PPM
--
Peak Pulse Power (kW)
Fig. 1 Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s
10
s
t
d
-- Pulse Width (sec.)
100
s
1.0ms
10ms
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
T
ransient
Thermal Impedance (
C/W)
Fig. 5 Typical Transient Thermal
Impedance
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25
C
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I
FSM
--
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
C
J
--
Junction Capacitance (pF)
10
100
1,000
10,000
10
1
100
200
V
(BR)
-- Breakdown Voltage (V)
T
J
= 25
C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
10
50
100
200
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Fig. 4 Typical Junction Capacitance
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I
PPM
--
Peak Pulse Current, % I
RSM
Fig. 3 Pulse Waveform
T
J
= 25
C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
tr = 10
sec.
Peak Value
I
PPM
Half Value -- IPP
I
PPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t -- Time (ms)
P4SMA6.8A --
P4SMA91A
P4SMA100A --
P4SMA220A
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
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