SS22 thru SS26
Vishay Semiconductors
formerly General Semiconductor
Document Number 88748
www.vishay.com
25-Jun-02
1
Surface Mount Schottky Rectifiers
Reverse Voltage 20 to 60V
Forward Current 2.0A
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Mounting Pad Layout
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile surface mount package
Built-in strain relief
Low power loss, high efficiency
For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
Mechanical Data
Case: JEDEC DO-214AA molded plastic body
Terminals: Solder plated, solderable per MIL-STD750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds at terminals
Polarity: Color band denotes cathode end
Weight: 0.003 oz., 0.093 g
Dimensions in inches
and (millimeters)
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
DO-214AA (SMB)
Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
SS22
SS23
SS24
SS25
SS26
Unit
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
V
RRM
20
30
40
50
60
V
Maximum RMS voltage
V
RMS
14
21
28
35
42
V
Maximum DC blocking voltage
V
DC
20
30
40
50
60
V
Max. average forward rectified current at T
L
(See Fig. 1)
I
F(AV)
2.0
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
I
FSM
75
A
Typical thermal resistance
(2)
R
JA
75
R
JL
17
C/W
Operating junction temperature range
T
J
65 to +125
65 to +150
C
Storage temperature range
T
STG
65 to +150
C
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Maximum instantaneous forward voltage at 2.0A
(1)
V
F
0.50
0.70
V
Maximum DC reverse current
(1)
T
A
= 25C
0.4
at rated DC blocking voltage
T
A
=100C
I
R
10
mA
Notes: (1) Pulse test: 300
s pulse width, 1% duty cycle
(2) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5mm) lead length
50
70
90
110
130
150
0
0.5
1.0
1.5
2.0
1
10
100
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10.0
50
10
100
500
0.1
1
10
100
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
SS22 - SS24
SS25 & SS26
SS22 - SS24
SS25 & SS26
SS22 - SS24
SS25 & SS26
SS22 - SS24
SS25 & SS26
At rated T
L
8.3ms single half sine-wave
(JEDEC Method)
Pulse width = 300
s
1% Duty Cycle
T
J
= 125
C
T
J
= 125
C
T
J
= 25
C
T
A
= 75
C
T
A
= 125
C
T
A
= 25
C
T
J
= 25
C
f = 1.0 MHz
Vsig = 50mVp-p
Fig. 1 - Forward Current
Derating Curve
Fig. 3 - Typical Instantaneous
Forward Characteristics
Fig. 5 - Typical Junction
Capacitance
Fig. 2 - Maximum Non-repetitive
Surge Current
Fig. 4 - Typical Reverse Current
Characteristics
Average Forward Current (A)
Peak Forward Surge Current (A)
Lead Temperature (
C)
Instantaneous Forwad Current (A)
Instantaneous Forward Voltage (V)
Junction Capacitance (pF)
Reverse Voltage (V)
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60Hz
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper pad areas
Resistive or
Inductive Load
SS22 thru SS26
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88748
2
25-Jun-02
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
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