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Электронный компонент: 2021-25

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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2021-25
25 Watts, 24 Volts, Class C
Microwave 2000 - 2130 MHz
GENERAL DESCRIPTION
The 2021-25 is a COMMON BASE transistor capable of providing 25 Watts,
Class C output power over the band 2000-2130 MHz. The transistor includes
input and output prematching for full Broadband capability. Gold
metalization and diffused ballasting are used to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 58 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 40 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
c
VSWR1
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2000-2100 MHz
Vcc = 24 Volts
Pout = 25 Watts
25
7.0
50
5.0
3:1
Watts
Watts
dB
%
BVces
BVebo
Hfe
Cob
jc
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance*
Thermal Resistance
Ic = 10 mA
Ie = 5 mA
Vce = 5V, Ic=1 A
Tc = 25 C
o
40
3.5
20
120
3.0
Volts
Volts
pF
C/W
o
* Not measureable due to internal prematch network
August 1996