GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2324-20
20 Watts, 24 Volts, Class C
Microwave 2300-2400 MHz
GENERAL DESCRIPTION
The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts
of Class C, RF output power over the band 2300-2400 MHz. This transistor is
specifically designed for Microwave Broadband Class C amplifier
applications. It includes input and output pre matching and utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. This transistor uses a fully hermetic High Temperature Solder
Sealed package.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 58 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 40 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
c
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2.3 - 2.4 GHz
Vcc = 24 Volts
20
7.0
40
4.0
10:1
Watts
Watts
dB
%
BVebo
BVces
Hfe
Cob
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance*
Thermal Resistance
Ie = 25 mA
I = 160 mA
Vce = 5 V, Ic =160mA
3.5
40
10
100
3.0
Volts
Volts
pF
C/W
o
* Not measurable due to internal prematch network
Issue August 1996
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