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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
MDS400
400 Watts Pk, 45 Volts, 32
s, 2%
Avionics 1030-1090 MHz
GENERAL DESCRIPTION
The MDS400 is a COMMON BASE transistor capable of providing 400 Watts
Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor
includes double input prematching for full broadband capability. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1450 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 55 Volts
BVebo Collector to Base Voltage 4.0 Volts
Ic Collector Current 40 Amps
Maximum Temperatures
Storage Temperature
-40 to + 200
C
Operating Junction Temperature + 200
C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Po
Pin
Pg
h
VSWR
1
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F =1030/1090 MHz
Vcc = 45 Volts
Pulse Width = 32
s
Duty Factor = 2 %
At Rated Power
400
6.5
35
90
10:1
Watts
Watts
dB
%
BVces
BVebo
H
fe
R
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Tc = 25 C
o
55
3.5
10
0.12
Volts
Volts
C/W
o
Issue September 22, 1995
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