GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TAN15
15 Watts, 40 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 960-1215 MHz. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input prematch for broadband capability. Low thermal resistance
package reduces junction temperature, extends life.
CASE OUTLINE
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 175 Watts
o
2
Maximum Voltage and Current
BVces Collector to Base Voltage 50 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 2.0 Amps
2
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 40 Volts
PW = 20
sec
DF = 5%
F = 1090 MHz
15
7.0
8.0
40
3.0
10:1
Watts
Watts
dB
%
BVebo
BVces
h
FE
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 10 mA
Ic = 10 mA, Vce = 5 V
3.5
50
1.0
Volts
Volts
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue December 1995
PDF 
ZIP
