R.3.070799
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UMIL10P
10 Watts, 28 Volts, Class AB
UHF Communications 100 400 MHz
ADVANCED RELEASE
GENERAL DESCRIPTION
The UMIL10P is a COMMON EMITTER broadband transistor specifically
intended for use in the 100-400 MHz frequency band. It may be operated in
Class AB or C. Gold metallization and silicon diffused resistors ensure
ruggedness and high reliability.
CASE OUTLINE
55FU Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25!C
28 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
55 V
Emitter to Base Voltage (BV
ebo
)
4.0 V
Collector Current (I
c
)
1.5 A
Maximum Temperatures
Storage Temperature
-65 to +150 !C
Operating Junction Temperature
+200 !C
Backside Surface is Gold Metalized
ELECTRICAL CHARACTERISTICS @ 25!
!
!
!C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
P
out
Power Out
F = 400 MHz
10
W
P
in
Power Input
V
CC
= 28 Volts, Pout = 10W
1.0
W
P
g
Power Gain
10.0
dB
"
c
Collector Efficiency
45
50
%
VSWR
Load Mismatch Tolerance
10:1
#
FUNCTIONAL CHARACTERISTICS @ 25!
!
!
!C
BV
ebo
Emitter to Base Breakdown
Ie = 5 mA
4.0
V
BV
ces
Collector to Emitter Breakdown Ic = 50 mA
55
V
BV
ceo
Collector to Emitter Breakdown Ie = 50 mA
30
V
Cob
Output Capacitance
Vcb = 28V, F = 1 MHz
11.5
PF
h
FE
DC Current Gain
Vce = 5V, Ic = 200mA
10
150
$
%jc
Thermal Resistance
6.3
!C/W
Initial Issue May 1999
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