ChipFind - документация

Электронный компонент: UTV010

Скачать:  PDF   ZIP
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV010
1 Watt, 20 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 010 is a COMMON EMITTER transistor capable of providing 1
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55FT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 15 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVceo Collector to Emitter Voltage 20 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 1.25 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
IMD
1
VSWR
1
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 20 Volts
Ic = 440 mA
Pref = 1.0 Watts
F = 860 MHz
1.0
11.5
-60
0.09
30:1
Watts
Watts
dB
dB
LVceo
BVces
BVebo
h
FE
Cob
jc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ic = 10 mA
Ie = 1 mA
Vce = 5 V, 200 mA
Vcb = 20 V, F = 1 MHz
Tc = 25 C
o
24
45
3.5
15
7.0
12
Volts
Volts
Volts
pF
C/W
o
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Initial Issue June, 1994
UTV010
August 1996
UTV010
C1,C4=100 ATC "B"
C2,C3= 8.2 pf ATC
C5= 2.0 pf
C6,C8= 1mF TANT
C7,C9= 1mF 50V
L2=3.3mH molded Ind.
L6= 100W Stripline
RFC1=5 Turns, 24Awg on 125ml Toroid
RFC2 in parallel with 15 1/2 Resistor
L5,L1= 50W Stripline 2" long
L4,L3= 34W Stripline 300 mils long
BIAS CIRCUIT
R1= 500 ohm Pot
R2= 4.7 Kohm 1/4 W
R3= 47 ohm 1/4 W
R4= 1 ohm 3 Watt, 1%
Cr1= IN 4148
Q1= MJE 172
C1
L1
L2
C6
C7
RFC 1
Vbe
C2
L3
C3
L4
C8
C9
RFC 1
L6
L5
C5
C4
Vce
Vcc
R1
CR1
R2
Vbe
R3
Q1
R4
Vcc
August 1996