GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV100B
100 Watts Pk, 28 Volt, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV100B is a COMMON EMITTER transistor capable of providing 100
Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input and output prematching for full broadband
capability. Gold Metalization and Diffused Ballasting are used to provide
high reliability and supreme ruggedness.
CASE OUTLINE
55RT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 290 Watts
o
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage 65 Volts
BVceo Collector to Emitter Voltage 30 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Maximum Temperatures
Storage Temperature -40 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
PldB
Pin
Po - ref
Pg
VSWR
Power Out - 1 dB Compression
Power Input
Power Output - Linear
Power Gain - Small Sig
Efficiency
Load Mismatch Tolerance
F =470 - 860 MHz
Vcc = 28 Volts
Icq = 300 mA (total)
Pout = 25 Watts Pk
100
25
8.5
55
5:1
12.5
Watts
Watts
Watts
dB
%
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
BVceo
BVces
BVebo
Hfe
Cob
R
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance - (each side)*
Thermal Resistance
Ic = 25 mA
Ic =25 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Vcb = 28V, F=1MHz
Tc = 25 C
o
30
60
3.5
20
47
120
0.6
Volts
Volts
Volts
pF
C/W
o
* Not measureable due to internal prematch network
Issue August 1996
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