GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV120
12 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 120 is a COMMON EMITTER transistor capable of providing 12
Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55JT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 80 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVceo Collector to Emitter Voltage 28 Volts
BVebo Emitter to Base Voltage 4 Volts
Ic Collector Current 3.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
IMD
1
VSWR
1
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
F = 470 - 860 MHz
Vcc = 26.5 Volts
Ic = 1.7 Amps
Pref = 12 Watts
F = 860 MHz
12
8.9
9.5
1.55
-52
3:1
Watts
Watts
dB
dB
LVceo
2
BVces
2
BVebo
2
h
FE
2
Cob
2
jc
Collector to Emitter
Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 65 mA
Ic = 25 mA
Ie = 10 mA
Vce = 5 V, 500 mA
Vcb = 26 V, F = 1
MHz
Tc = 25 C
o
28
45
4
10
23
1.6
Volts
Volts
Volts
pF
C/W
o
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Note 2: Per side
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE
PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE
CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV120
UTV-120
CAPACITORS
C1,C6=4.7 pF ATC series A
C2,C3,C20,C21=33 pF ATC series A
C4,C9=1.2-3.5 pF film diel. trimmer
C5,C7,C11,C12=0.01 mF, 50V Tantalum
C8,C15,C17,C25=1 mF, 50 V Tantalum
C10,C16,C27,C12=0.1 mF 50 V disc ceramic
C13=0.6-6 pF piston trimmer
C19=0.35-3.5 pF piston trimmer
C18,C24,C14,C26=10 mF, 50 V
C28,C30=0.001 mF, 50 V disc ceramic
C31=100 mF, 50 V electrolytic
RESISTORS
R1=10 Ohm, 1/2 W Carbon
R2,R6=500 Ohm potentiometer
R3,R7=4.7K Ohm, 3W, 1% Carbon
R4,R8=1 Ohm, 3W, 1% Carbon film
R5,R9=47 Ohm, 1/4W Carbon film
DIODES
CR1,CR2=IN4148
TRANSISTORS
Q1=GHz UTV-120
Q2,Q3=MJE172
TRANSFORMERS
T1,T2,T3,T4=50 Ohm semi-rigid coax cable
(0.056" X 1.1") soldered to
0.035" X 1.1" microstrip
INDUCTORS
L1,L2=0.46 microHenry molded
L3,L4=1 turn #18 magnet wire on a 0.325" form
MICROSTRIPLINES
L3,L4=0.075" X 0.65"
L5,L6=0.120" X 0.31"
L7,L8=0.120" X 1.33"
BIAS CIRCUIT
50 OHM
RF IN
T2
T1
C1
C2
C3
C5
C16
Vbe 2
C24
C8
L1
+
+
L3
L5
C4
C6
C9
Q1
L6
L5
L2
C7
C10
C25 C26
+ +
Vbe 1
C13
C19
C20
C21
L7
L8
L3
Vce 1
C5
C28
+
+
C8
C14
C15
L4
C12
+
+
C17
C18
C29 C30
Vce 2
T3
T4
C22
R1
C23
50 OHM
RF OUT
R2
C31
+
R4
R6
R8
Vce 2
Q3
R9
R7
CR2
Vce 1
Q2
R5
R3
CR1
Vbe 1
Vbe 2
August 1996
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