Ghz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV8100B
100 Watts Pk, 28 Volt, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
CASE OUTLINE
The UTV8100B is a COMMON EMITTER transistor capable of providing
100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz.
The transistor includes double input and output prematching for full
broadband capability. Gold Metalization and Diffused Ballasting are used to
provide high reliability and supreme ruggedness.
55RT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 290 Watts
o
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage 65 Volts
BVceo Collector to Emitter Voltage 30 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Maximum Temperatures
Storage Temperature -40 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX
UNITS
CONDITIONS
PldB
Pin
Power Input
Vcc = 28 Volts
14.0
Watts
Po - ref
Pg
VSWR
Power Out - 1 dB Compression
F =470 - 860 MHz
100
110
Watts
Power Output - Linear
Icq = 300 mA (total)
25
Watts
Power Gain - Small Sig
8.5
9.5
dB
Efficiency 55
58
%
Load Mismatch Tolerance
Pout = 25 Watts Pk
5:1
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
BVceo
BVces
Collector to Emitter Breakdown
Ic =25 mA
60
Volts
BVebo
Hfe
Cob
R
jc
Collector to Emitter Breakdown
Ic = 25 mA
30
Volts
Emitter to Base Breakdown
Ie = 30 mA
3.5
Volts
Current Gain
Vce = 5 V, Ic = 1 A
20
120
Output Capacitance - (each side)*
Vcb = 28V, F=1MHz
44
pF
Thermal Resistance
Tc = 25 C
0.6
C/W
o
o
* Not measureable due to internal prematch network
Issue December 1996
GHz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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