G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 1 -
Features :
Description :
65,536 words by 16 bits organization.
Fast access time and cycle time.
Dual
WE
Input.
Low power dissipation.
Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Refresh and Test Mode Capability.
256 refresh cycles per 4ms.
Available in 40-pin 400 mil SOJ,and 40/44
pin TSOP(II).
Single 5.0V
10% Power Supply, Except
5V+5%,-10% for 30ns TSOPII Package.
All inputs and Outputs are TTL
compatible.
Extended Data-Out(EDO) Page Mode
operation.
The GLT41216 is a 65,536 x 16 bit high-
performance CMOS dynamic random access
memory. The GLT41216 offers Fast Page
mode with Extended Data Output, and has
both BYTE WRITE and WORD WRITE
access cycles via two
WE
pins. The
GLT41216 accepts 256-cycle refresh in 4ms
interval.
All inputs are TTL compatible. EDO
Page Mode operation allows random access
up to 256 x 16 bits, within a page, with cycle
times as short as 12ns.
The GLT41216 is best suited for
graphics, and DSP applications requiring
high performance memories.
HIGH PERFORMANCE
30
35
40
45
Max. RAS Access Time, (t
RAC
)
30 ns
35 ns
40 ns
45 ns
Max. Column Address Access Time, (t
AA
)
15 ns
18 ns
20 ns
22 ns
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
12 ns
13 ns
15 ns
18 ns
Min. Read/Write Cycle Time, (t
RC
)
65 ns
70 ns
75 ns
80 ns
Max. CAS Access Time (t
CAC
)
10 ns
11 ns
12 ns
12 ns
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 2 -
Pin Configuration :
Pin Descriptions:
Name
Function
A
0
- A
7
Address Inputs
RAS
Row Address Strobe
CAS
Column Address Strobe
UW
Read/Upper Byte Write Enable
LW
Read/Lower Byte Write Enable
OE
Output Enable
DQ
0
- DQ
15
Data Inputs / Outputs
V
CC
+5V Power Supply
V
SS
Ground
NC
No Connection
GLT41216
SOJ Top View
TSOP(Type II)
Top View
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 3 -
Absolute Maximum Ratings*
Capacitance*
T
A
=25
C, V
CC
=5V
10%, V
SS
=0V
Operating Temperature, T
A
(ambient)
.......................................-0
C to +70
C
Storage Temperature(plastic)....-55
C to +150
C
Voltage Relative to V
SS
...............-1.0V to + 7.0V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
Symbol
C
IN1
C
IN2
C
OUT
Parameter
Address Input
RAS , CAS , UW , LW , OE
Data Input/ Output
Max.
5
7
7
Unit
pF
pF
pF
*Note: Operation above Absolute Maximum Ratings
can adversely affect device reliability.
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l
WE means UW andLW .
l
All voltages are referenced to GND.
l
After power up, wait more than 100
s and then, execute eight CAS -before- RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 4 -
Extended Data Output (EDO) Page Mode
The EDO page mode is a kind of page mode with enhanced features. The two major features
of the EDO page mode are as follows.
1. Data output time is extended.
In the EDO page mode, the output data is held to the next CAS cycle`s falling edge,
instead of the rising edge. For this reason, valid data output time in the EDO page mode is
extended compared with the fast page mode (=data extend function). In the fast page mode,
the data output time becomes shorter as the CAS cycle time becomes shorter. Therefore, in
the EDO page mode, the timing margin in read cycle is larger than of the fast page mode
even if the CAS cycle time becomes shorter.
2. The CAS cycle time in the EDO page mode is shorter than that in the fast page mode.
In the EDO page mode, due to the data extend function, the CAS cycle time can be
shorter than in the fast page mode if the timing margin is the same.
Taking a device whose t
RAC
is 60ns as an example, the CAS cycle time in the EDO page
mode is 25ns while that in the fast page mode is 40ns.
In the EDO page mode, read (data out) and write (data in) cycles can be executed
repeatedly during one RAS cycle. The EDO page mode allows both read and write
operations during one cycle, but the performance is equivalent to that of the fast page mode
in that case.
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 5 -
Truth Table: GLT41216
Function
RAS
CAS
UW
LW OE ADDRESS
DQs
Note
s
Standby
H
H
X
X
X
X
High-Z
Read: Word
L
L
H
H
L
ROW/COL Data Out
Write: Word(Early Write)
L
L
L
L
X
ROW/COL Data-In
Write: Lower Byte (Early)
L
L
H
L
X
ROW/COL Lower Byte,Data-In
Upper Byte,High-Z
Write: Upper Byte (Early)
L
L
L
H
X
ROW/COL Lower Byte,High-Z
Upper Byte,Data-In
Read Write
L
L
H
L H
L L
H ROW/COL Data-Out,Data-In
1,2
EDO-Page-
1st Cycle
L
H
L
H
H
L
ROW/COL Data-Out
1
Mode Read
2nd Cycle
L
H
L
H
H
L
COL
Data-Out
1
EDO-Page-
1st Cycle
L
H
L
L
L
X
ROW/COL Data-In
2
Mode Write
2nd Cycle
L
H
L
L
L
X
COL
Data-In
2
EDO-Page-
1st Cycle
L
H
L
H
L H
L L
H ROW/COL Data-Out,Data-In
1,2
Mode Read-
Write
2st Cycle
L
H
L
H
L H
L L
H
COL
Data-Out,Data-In
1,2
Hidden
Read
L
H
L
L
H
H
L
ROW/COL Data-Out
1
Refresh
Write
L
H
L
L
L
L
X
ROW/COL Data-In
2,3
RAS -Only Refresh
L
H
X
X
X
ROW
High-Z
CBR Refresh
H
L
L
X
X
X
High-Z
Notes:
1. These READ cycles are always WORD READ cycles.
2. These WRITE cycles may also be BYTE READ cycles (either UW or LW active).
3. EARLY WRITE only.
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 6 -
DC and Operating Characteristics (1-2)
T
A
= 0
C to 70
C, V
CC
=5V
10%, V
SS
=0V, unless otherwise specified.
Sym.
Parameter
Test Conditions
Access
Time
Min.
Typ
Max. Unit Notes
I
LI
Input Leakage Current
(any input pin)
0V
V
IN
5.5V
(All other pins not under
test=0V)
-10
+10
A
I
LO
Output Leakage Current
(for High-Z State)
0V
V
out
5.5V
Output is disabled (Hiz)
-10
+10
A
I
CC1
Operating Current,
Random READ/WRITE
t
RC
= t
RC
(min.)
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
180
170
160
150
mA
1,2
I
CC2
Standby Current,(TTL)
RAS , CAS , at V
IH
other inputs
V
SS
2
mA
I
CC3
Refresh Current,
RAS -Only
RAS cycling, CAS , at
V
IH
t
RC
= t
RC
(min.)
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
180
170
160
150
mA
2
I
CC4
Operating Current,
EDO Page Mode
RAS at V
IL
,
CAS address cycling:
t
PC
= t
PC
(min.)
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
180
170
160
150
mA
1,2
I
CC5
Refresh Current,
CAS Before RAS
RAS , CAS ,
address cycling:
t
RC
= t
RC
(min.)
t
RAC
= 30ns
t
RAC
= 35ns
t
RAC
= 40ns
t
RAC
= 45ns
180
170
160
150
mA
1
I
CC6
Standby Current, (CMOS)
RAS
V
CC
-0.2V,
CAS
V
CC
-0.2V,
All other inputs V
SS
1
mA
V
IL
Input Low Voltage
-1
+0.8
V
3
V
IH
Input High Voltage
2.4
V
CC
+1
V
3
V
OL
Output Low Voltage
I
OL
= 4.2mA
0.4
V
V
OH
Output High Voltage
I
OH
= -5mA
2.4
V
Notes:
1.
I
CC
is dependent on output loading when the device output is selected. Specified I
CC
(max.) is measured with
the output open.
2. I
CC
is dependent upon the number of address transitions specified I
CC
(max.) is measured with a maximum of
one transition per address cycle in random Read/Write and EDO Fast Page Mode.
3.Specified V
IL
(min.) is steady state operation. During transitions V
IL
(min.) may undershoot to -1.0V for a period
not to exceed 20ns. All AC parameters are measured with V
IL
(min.)
V
SS
and V
IH
(max.)
V
CC
.
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 7 -
AC Characteristics
T
A
= 0
C to 70
C , V
CC
= 5 V
10
%
, VIH/VIL = 2.4/0.8 V, V
OH
/V
OL
= 2.0/0.8V
An initial pause of 100
s and 8 CAS -before- RAS or RAS -only refresh cycles are required after power-up.
30
35
40
45
Parameter
Symbol Min. Max. Min. Max. Min
.
Max. Min
.
Max. Unit Notes
Read or Write Cycle Time
t
RC
65
70
75
80
ns
Read Modify Write Cycle Time
t
RWC
85
87
93
103
ns
RAS Precharge Time
t
RP
25
25
25
30
ns
RAS Pulse Width
t
RAS
30 100k 35 100k 40 100k 45 100k ns
Access Time from RAS
t
RAC
30
35
40
45
ns
1,2,3
Access Time from CAS
t
CAC
10
11
12
12
ns
1,5,10
Access Time from Column Address
t
AA
15
18
20
22
ns
1,5,6
CAS to Output Low-Z
t
CLZ
0
0
0
0
ns
CAS to Output High-Z
t
CEZ
3
3
8
3
8
3
8
ns
RAS Hold Time
t
RSH
10
12
12
13
ns
RAS Hold Time Referenced to OE
t
ROH
7
8
8
9
ns
CAS Hold Time
t
CSH
25
30
34
40
ns
CAS Pulse Width
t
CAS
4.5
6
10K
6
10K
7
10K
ns
RAS to CAS Delay Time
t
RCD
13
17
24
18
28
18
33
ns
RAS to Column Address Delay Time
t
RAD
10
12
17
13
20
13
23
ns
7
CAS to RAS Precharge Time
t
CRP
5
5
5
5
ns
Row Address Set-Up Time
t
ASR
0
0
0
0
ns
Row Address Hold Time
t
RAH
6
7
8
8
ns
Column Address Set-Up Time
t
ASC
0
0
0
0
ns
Column Address Hold Time
t
CAH
6
6
6
6
ns
Column Address to RAS Lead Time
t
RAL
15
18
20
23
ns
Column Address Hold Time Referenced to
RAS
t
AR
26
30
34
39
ns
Read Command Set-Up Time
t
RCS
0
0
0
0
ns
Read Command Hold Time Referenced to CAS
t
RCH
0
0
0
0
ns
4
Read Command Hold Time Referenced to RAS
t
RRH
0
0
0
0
ns
4
Write Command Set-Up Time
t
WCS
0
0
0
0
ns
8,9
Write Command Hold Time
t
WCH
6
6
6
6
ns
Write Command Pulse Width
t
WP
6
6
6
6
ns
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 8 -
AC Characteristics
30
35
40
45
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min
.
Max. Unit Notes
Write Command to RAS Lead Time
t
RWL
10
11
12
12
ns
Write Command to CAS Lead Time
t
CWL
10
11
12
12
ns
Data Set-Up Time
t
DS
0
0
0
0
ns
Data Hold Time
t
DH
6
7
8
8
ns
Data Hold Time Referenced to RAS
t
DHR
26
31
36
41
ns
RAS to WE Delay Time
t
RWD
44
49
54
59
ns
CAS to WE Delay Time
t
CWD
22
23
24
24
ns
Column Address to WE Delay Time
t
AWD
25
30
32
34
ns
RAS to CAS Precharge Time
t
RPC
0
0
0
0
ns
Access Time from CAS Precharge
t
CPA
17
20
22
24
ns
EDO Page Mode Cycle Time
t
PC
12
13
15
18
ns
EDO Page Mode Read-Modify-Write Cycle Time
t
PRWC
43
47
50
52
ns
CAS Precharge Time (EDO Page Mode)
t
CP
4.5
5
5
7
ns
RAS Pulse Width (EDO Page Mode Only)
t
RASP
30 100k 35 100k 40 100k 45 100k
ns
Access Time from OE
t
OEA
10
11
12
12
ns
OE to Data Delay Time
t
OED
8
8
8
8
ns
OE to Output High-Z
t
OEZ
3
8
3
8
3
8
3
8
ns
OE Command Hold Time
t
OEH
6
6
7
7
ns
Data Output Hold after CAS low
t
DOH
3
3
3
5
ns
RAS to Output High-Z
t
REZ
3
8
3
8
3
8
3
8
ns
WE to Output High-Z
t
WEZ
3
10
3
10
3
10
3
10
ns
OE to CAS Hold Time
t
OCH
8
8
8
8
ns
CAS Hold Time to OE
t
CHO
8
8
8
8
ns
OE Precharge Time
t
OEP
8
8
8
8
ns
CAS Set-Up Time for CAS -before- RAS Cycle
t
CSR
10
10
10
10
ns
CAS Hold Time for CAS -before- RAS Cycle
t
CHR
10
10
10
10
ns
Transition Time
t
T
1.5
50
2
50
2
50
2
50
ns
Refresh Period
t
REF
4
4
4
4
ms
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 9 -
Notes:
1. Measure with a load equivalent to 1TTL inputs and 50 pF.
2. Assumes that t
RCD
t
RCD
(max.). If t
RCD
is greater than t
RCD
(max.), access time will be t
AA
dominant.
3. Assumes that t
RAD
t
RAD
(max.). If t
RAD
is greater than t
RCD
(max.), access time will be
controlled by t
CAC
.
4. Either t
RRH
or t
RCH
must be satisfied for a Read Cycle.
5. Access time is determined by the longest of t
AA
, t
CAC
and t
CPA
.
6. Assumes that t
RAD
t
RAD
(max.).
7. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.)
is specified as a reference point only. If t
RAD
is greater than the specified t
RAD
(max.)
limit, the access time is controlled by t
AA
and t
CAC
.
8. t
WCS
, t
RWD
, t
AWD
and t
CWD
are not restrictive operating parameters.
9. t
WCS
(min.) must be satisfied in an Early Write Cycle.
10. t
DS
and t
DH
are referenced to the latter occurrence of CAS or WE .
11. t
T
is measured between V
IH
(min.) and V
IL
(max.). AC-measurements assume t
T
= 2 ns.
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 10 -
Read Cycle
ROW
ADDRESS
COLUMN
ADDRESS
DATA-OUT
t
RC
t
RAS
t
RP
t
CRP
t
CSH
t
RCD
t
RSH
t
CAS
t
CRP
t
ASR
t
RAH
t
RAD
t
ASC
t
CAH
t
RAL
t
RCH
t
RRH
t
AR
t
RCS
t
AA
t
OEA
t
CEZ
t
OEZ
t
CAC
t
CLZ
t
RAC
Don't Care
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
OH-
V
OL-
DQ
Early Write Cycle
NOTE : D
OUT
= OPEN
t
RP
t
RC
t
CRP
t
CSH
t
CRP
t
RCD
t
RSH
t
CAS
t
ASR
t
RAH
t
RAD
t
ASC
t
CAH
t
RAL
t
CWL
t
RWL
t
WCR
t
WCH
t
WP
t
WCS
t
AR
t
DS
t
DH
t
DHR
DATA - IN
COLUMN
ADDRESS
ROW
ADDRESS
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
IH-
V
IL-
DQ
Don't Care
t
RAS
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 11 -
OE Controlled Write Cycle
NOTE : D
OUT
= OPEN
t
RP
t
RC
t
CRP
t
CSH
t
CRP
t
RCD
t
RSH
t
CAS
t
ASR
t
RAH
t
RAD
t
ASC
t
CAH
t
RAL
DATA - IN
COLUMN
ADDRESS
ROW
ADDRESS
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
IH-
V
IL-
DQ
Don't Care
t
RAS
t
RCS
t
CWL
t
RWL
t
WP
t
DS
t
OED
t
OEH
t
DH
Read - Modify - Write Cycle
t
RP
t
RC
t
CRP
t
CRP
t
RCD
t
RSH
VALID
DATA-OUT
COLUMN
ADDRESS
ROW
ADDR.
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
I/OH-
V
I/OL-
DQ
Don't Care
t
RAS
VALID
DATA-IN
t
CAS
t
ASR
t
RAH
t
RAD
t
ASC
t
CAH
t
CSH
t
AWD
t
CWD
t
RWL
t
CWL
t
WP
t
OEA
t
CLZ
t
CAC
t
AA
t
RAC
t
DH
t
DS
t
OED
t
OEZ
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 12 -
EDO Page Mode Read Cycle
NOTE : D
OUT
= OPEN
t
RASP
t
RP
t
CRP
t
RCD
t
CAS
t
CSH
t
CP
t
CAS
t
CAS
t
CAS
t
CP
t
CP
t
PC
t
PC
t
PC
t
CSR
t
RAH
t
RAD
t
ASC
t
ASC
t
ASC
t
ASC
t
CAH
t
CAH
t
CAH
t
CAH
t
RCS
t
RCH
t
RRH
t
OEA
t
OEA
t
CAC
t
CPA
t
AA
t
OCH
t
CPA
t
AA
t
CAC
t
OEP
t
CHO
t
AA
t
CAC
t
CPA
t
CLZ
t
OLZ
t
RAC
t
CAC
t
DOH
t
OEZ
t
OEP
t
OEZ
t
OEZ
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-OUT
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
DQ
V
OH-
V
OL-
ROW
ADDR.
COLUMN
ADDRESS
COLUMN
ADDRESS
COL.
ADDR.
COL.
ADDR.
Don't Care
t
RHCP
EDO Page Mode Early Write Cycle
NOTE : D
OUT
= OPEN
t
RASP
t
RP
t
CRP
t
RCD
t
CAS
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
t
CAS
t
CAS
t
CP
t
CP
t
PC
t
PC
t
RSH
t
ASR
t
RAD
t
RAH
t
ASC
t
CAH
t
CSH
t
ASC
t
ASC
t
CAH
t
CAH
t
WCS
t
WP
t
WCH
t
WCS
t
WCS
t
WCH
t
WCH
t
WP
t
WP
t
DS
t
DS
t
DS
t
DH
t
DS
t
DS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
DQ
V
IH-
V
IL-
ROW
ADDR.
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDRESS
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
Don't Care
t
RHCP
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 13 -
EDO Page Mode Read - Modify - Write Cycle
NOTE : D
OUT
= OPEN
t
RASP
t
RP
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
Don't Care
t
CSH
t
RCD
t
CAS
t
CP
t
CAS
t
RSH
t
CRP
t
RAD
t
RAH
t
ASR
t
ASC
t
CAH
t
ASC
t
CAH
t
RAL
t
PRWC
t
RCS
t
WP
t
CWL
t
WP
t
CWL
t
RWL
t
CWD
t
AWD
t
RWD
t
OEA
t
CWD
t
AWD
t
CPWD
t
OEA
t
OEH
t
RAC
t
AA
t
CAC
t
OEZ
t
OED
t
DS
t
DH
t
AA
t
CAC
t
OEZ
t
OED
t
DS
t
DH
t
CLZ
t
CLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
ROW
ADDR.
COL.
ADDR.
COL.
ADDR.
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
I/OH-
V
I/OL-
DQ
EDO Page Read And Write Mixed Ccycle
t
RASP
t
RP
t
CAS
t
HPC
t
CAS
t
CAS
t
CP
t
CP
t
CP
t
ASR
t
HPC
t
HPC
t
RAH
t
ASC
t
CAH
t
ASC
t
ASC
t
ASC
t
CAH
t
CAH
t
CAH
t
RCS
t
RCH
t
RCS
t
RCH
t
RCH
t
WCS
t
WCH
t
WPE
t
CPA
t
CLZ
t
WED
t
WEZ
t
RAC
t
AA
t
CAC
t
OEA
t
WEZ
t
DS
t
DH
t
AA
t
REZ
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-IN
ROW
ADDR
COL.
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDRESS
V
IH-
V
IL-
V
IH-
V
IL-
V
IH-
V
IL-
V
IH-
V
IL-
V
IH-
V
IL-
V
I/OH-
V
I/OL-
RAS
CAS
ADDRESS
WE
OE
DQ
0
~
DQ
3
Don't Care
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 14 -
CAS - Before - RAS Refresh Cycle
V
IH-
V
IL-
RAS
t
RAS
t
RAS
t
RP
t
RP
t
RC
t
RC
t
CSR
t
CSR
t
CHR
t
CHR
t
RPC
t
RPC
t
CRP
V
IH-
V
IL-
CAS
t
WRH
t
WRP
V
IH-
V
IL-
WE
t
WRP
t
WRH
Remark Address, OE : Don't care DQ : Hi - Z
RAS -Only Refresh Cycle
V
IH-
V
IL-
RAS
t
RAS
t
RAS
t
RP
t
RP
t
RC
t
RC
t
RPC
t
CRP
V
IH-
V
IL-
CAS
t
CRP
t
ASR
t
ASR
t
RAH
t
RAH
ROW
ADDRESS
ROW
ADDRESS
Address
V
IH-
V
IL-
Remark WE, OE : Don't care DQ : Hi - Z
Hidden Refresh Cycle ( Read )
t
RP
t
CRP
t
RCD
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
t
RAC
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
DQ
V
IH-
V
IL-
ROW
ADDRESS
Don't Care
t
RP
t
CAC
t
RCS
t
ASC
t
CAH
t
ASR
t
CAH
t
RAD
t
RAL
t
RSH
t
CHR
t
RC
t
RAS
t
RAS
COLUMN
ADDRESS
t
RC
t
WRH
t
AA
t
OEA
t
CLZ
t
REZ
t
CEZ
t
WEZ
t
OEZ
DATA-OUT
OPEN
t
WRP
t
RRH
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 15 -
Hidden Refresh Cycle ( Write )
NOTE : D
OUT
= OPEN
t
RP
t
CRP
t
RCD
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
t
DS
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
DQ
V
IH-
V
IL-
ROW
ADDRESS
Don't Care
t
RP
t
DH
t
WP
t
WCH
t
WCS
t
ASC
t
CAH
t
ASC
t
CAH
t
RAD
t
RSH
t
RSH
t
CHR
t
RC
t
RAS
t
RAS
COLUMN
ADDRESS
DATA-IN
t
WRP
t
WRH
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 16 -
CAS-Before RAS Refresh Counter Test Cycle
t
CAS
t
CPT
V
IH-
V
IL-
RAS
V
IH-
V
IL-
CAS
t
RP
t
RAS
t
CSR
t
CHR
t
RSH
t
RAL
t
ASC
t
AA
t
CAC
t
RCS
t
RRH
t
RCH
t
WRP
t
WRH
t
WRH
t
WRP
t
OEA
t
CEZ
t
OEZ
t
CLZ
t
RWL
t
CWL
t
WCH
t
WCS
t
WP
t
DS
t
DH
t
RCS
t
AWD
t
CWD
t
RWL
t
CWL
t
WP
t
DH
t
DS
t
OED
t
OEZ
t
CLZ
t
CAC
t
AA
t
OEA
OPEN
COLUMN
ADDRESS
VALID DATA-OUT
VALID DATA-IN
Don't Care
VALID
DATA-IN
VALID
DATA-OUT
V
IH-
V
IL-
Address
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
OH-
V
OL-
DQ
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
IH-
V
IL-
DQ
V
IH-
V
IL-
WE
V
IH-
V
IL-
OE
V
I/OH-
V
I/OL-
DQ
Read Cycle
Write Cycle
Read-Modify-Write
t
CAH
t
WRP
t
WRH
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 17 -
Ordering Information
Part Number
SPEED
POWER
FEATURE
PACKAGE
GLT41216-30J4
30ns
Normal
EDO
SOJ 400mil 40L
GLT41216-35J4
35ns
Normal
EDO
SOJ 400mil 40L
GLT41216-40J4
40ns
Normal
EDO
SOJ 400mil 40L
GLT41216-45J4
45ns
Normal
EDO
SOJ 400mil 40L
GLT41216-30TC
30ns
Normal
EDO
TSOP 400mil 44L
GLT41216-35TC
35ns
Normal
EDO
TSOP 400mil 44L
GLT41216-40TC
40ns
Normal
EDO
TSOP 400mil 44L
GLT41216-45TC
45ns
Normal
EDO
TSOP 400mil 44L
Parts Numbers (Top Mark) Definition :
GLT 4 12 16 - 30 J4
Note : C
CDROM , H
HDD.
Example :
1.GLT710008-15T 1Mbit(128Kx8)15ns 5V SRAM PDIP(300mil)Package type.
2.GLT44016-40J4 4Mbit(256Kx16)40ns 5V DRAM SOJ(400mil)Package type.
4 : DRAM
6 : Standard
SRAM
7 : Cache SRAM
8 : Synchronous
Burst SRAM
-SRAM
064 : 8K
256 : 256K
512 : 512K
100 : 1M
-DRAM
10 : 1M(C/EDO)*
11 : 1M(C/FPM)*
12 : 1M(H/EDO)*
13 : 1M(H/FPM)*
20 : 2M(EDO)
21 : 2M(FPM)
40 : 4M(EDO)
41 : 4M(FPM)
80 : 8M(EDO)
81 : 8M(FPM)
*See note
VOLTAGE
Blank : 5V
L : 3.3V
M : Mix Voltage
CONFIG.
04 : x04
08 : x08
16 : x16
32 : x32
SPEED
-SRAM
12 : 12ns
15 : 15ns
20 : 20ns
70 : 70ns
-DRAM
35 : 35ns
40 : 40ns
45 : 45ns
50 : 50ns
60 : 60ns
PACKAGE
T : PDIP(300mil)
TS : TSOP(Type I)
TC : TSOP(Type ll)
PL : PLCC
FA : 300mil SOP
FB : 330mil SOP
FC : 445mil SOP
J3 : 300mil SOJ
J4 : 400mil SOJ
P : PDIP(600mil)
Q : PQFP
TQ : TQFP
G -LINK
GLT41216
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug 1999 (Rev.2.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
- 18 -
Package Information
400mil 40 pin Small Outline J-form Package (SOJ)
40/44 Lead Thin Small Outline Package TSOP(Type II)
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