Note:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Features
1N4448
SILICON EPITAXIAL PLANAR DIODE
Silicon Epitaxial Planar Diode
fast switching diode.
This diode is also available in MiniMELF case with the type
designation LL4448.
Absolute Maximum Ratings
(T
a
=25 )
1
Symbols
Values
Units
Reverse Voltage
V
R
75
Volts
Peak reverse voltage
V
RM
100
Volts
Rectified current (Average)
Half wave rectification with Resist. Load
at T
amb
=25 and f 50Hz
I
O
150
1)
mA
Surge forward current at t<1s and T
j
=25
I
FSM
500
mA
Power dissipation at T
amb
=25
P
tot
500
1)
mW
Junction Temperature
T
j
200
Storage temperature range
T
S
-65 to +200
DIMENSIONS
DIM
inches
mm
Note
Min.
Max.
Min.
Max.
A
-
0.154
-
3.9
B
-
0.075
-
1.9
C
-
0.020
-
0.52
D
1.083
-
27.50
-
Characteristics
at
T
j
=25
Symbols
Min.
Typ.
Max.
Units
Forward voltage
at I
F
=5mA
at I
F
=100mA
V
F
V
F
0.62
-
-
-
0.72
1
Volt
Leakage current
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
j
=150
I
R
I
R
I
R
-
-
-
-
-
-
25
5
50
nA
uA
uA
Reverse breakdown voltage tested with 100uA pulses
V
(BR)R
100
-
-
Volts
Capacitance
at V
F
=V
R
=0
C
tot
-
-
4
F
Reverse recovery time
from I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
t
rr
-
-
4
nS
Thermal resistance
junction to ambient Air
R
thA
-
-
0.35
1)
K/mW
Rectification efficiency
at f=100MHz, V
RF
=2V
V
0.45
-
-
-
Note:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Rectification efficiency measurement circuit
2
PDF 
ZIP
