Note:
(1) Valid provided that electrodes are kept at ambient temperature
Features
LL4448
SILICON EPITAXIAL PLANAR DIODE
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4448
These diode are delivered taped.
Details see Taping.
Weight approx. : 0.05g
Absolute Maximum Ratings
(T
a
=25 )
1
Symbols
Values
Units
Reverse voltage
V
R
75
Volts
Peak reverse voltage
V
RM
100
Volts
Rectified current (Average)
Half wave rectification with Resist. Load
at T
amb
=25 and f 50Hz
I
O
150
1)
mA
Surge forward current at t<1s and T
j
=25
I
FSM
500
mA
Power dissipation at T
amb
=25
P
tot
500
1)
mW
Junction Temperature
T
j
175
Storage temperature range
T
S
-65 to +175
DIMENSIONS
DIM
inches
mm
Note
Min.
Max.
Min.
Max.
A
0.134
0.142
3.4
3.6
B
0.055
0.059
1.40
1.50
C
0.008
0.016
0.2
0.4
Characteristics
at
T
j
=25
Symbols
Min.
Typ.
Max.
Units
Forward voltage
at I
F
=5mA
at I
F
=100mA
V
F
V
F
0.62
-
-
-
0.72
1
Volt
Volt
Leakage current
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
j
=150
I
R
I
R
I
R
-
-
-
-
-
-
25
5
50
nA
uA
uA
Reverse breakdown voltage
tested with 100uA pulses
V
(BR)R
100
-
-
Volts
Capacitance
at V
F
=V
R
=0
C
tot
-
-
4
F
Reverse recovery time
from I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100
t
rr
-
-
4
nS
Thermal resistance
junction to ambient Air
R
thA
-
-
0.35
1)
K/mW
Rectification efficiency
at f=100MHz, V
RF
=2V
V
0.45
-
-
-
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Rectification efficiency measurement circuit
2
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