GSD32008
RECTIFIER DIODE
VOLTAGE UP TO
1600 V
AVERAGE CURRENT
80 A
SURGE CURRENT
1.43 kA
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
1600 V
V
RSM
Non-repetitive peak reverse voltage
1700 V
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
5 mA
FORWARD CHARACTERISTICS
I
F(AV)
Average forward current
Sine wave,180 conduction, Tc = 125C
80 A
I
F(RMS)
R.M.S. forward current
Sine wave,180 conduction, Tc = 125C
126 A
I
FSM
Surge forward current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
1.43 kA
It
I t for fusing coordination
10.2 kAs
V
F(TO)
Threshold voltage
T
j
= T
jmax
0.86 V
r
F
Forward slope resistance
T
j
= T
jmax
2.5 m
V
FM
Peak forward voltage, max
Forward current I
F
=
240 A, Tj = 25 C
1.60 V
SWITCHING CHARACTERISTICS
Q
rr
Rverse recovery charge
T
j
= T
jmax
, I
F
= A, tp = s, di/dt = A/s
C
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
0.55 C/W
R
th(c-h)
Thermal resistance (case to heatsink)
0.2 C/W
T
jmax
Max operating junction temperature
180 C
T
stg
Storage temperature
-40 / 180 C
M
Mounting torque +/- 10%
4 Nm
Mass
50 g
Ordering information
cathode on stud
anode on stud
GSD32008-vv
GSDR32008-vv
vv=V
RRM
/100
example
GSD32008-10
1000 V
Document GSD32008T001
Value
Case style DO5
Dimensions in mm
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Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
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