GSD63034
FAST RECOVERY STUD DIODE
UL-certified insulating sleeve
VOLTAGE UP TO
3000 V
AVERAGE CURRENT
340 A
SURGE CURRENT
4.5 kA
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
3000 V
V
RSM
Non-repetitive peak reverse voltage
3100 V
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
50 mA
FORWARD CHARACTERISTICS
I
F(AV)
Average forward current
Sine wave,180 conduction, Tc = 85 C
340 A
I
F(RMS)
R.M.S. forward current
Sine wave,180 conduction, Tc = 85 C
534 A
I
FSM
Surge forward current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
4.5 kA
It
I t for fusing coordination
101 kAs
V
F(TO)
Threshold voltage
T
j
= T
jmax
0.84 V
r
F
Forward slope resistance
T
j
= T
jmax
1.53 m
V
FM
Peak forward voltage, max
Forward current I
F
=
780 A, Tj = 25C
1.8 V
SWITCHING CHARACTERISTICS
t
rr
Rverse recovery time, typ
s
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
Double side cooled
0.12 C/W
R
th(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.05 C/W
T
jmax
Max operating junction temperature
160 C
T
stg
Storage temperature
-40 / 160 C
M
Mounting torque
50 Nm
Mass
250 g
Ordering information
cathode on stud
anode on stud
GSD63034-vv
GSDR63034-vv
vv=V
RRM
/100
example GSD63034-28
2800 V cathode on stud
Document GSD63034T001
Value
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Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
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