Pnp diffused silicon structure
Symmetric blocking characteristics
Suitable for SCR, BJT and IGBT applications
A
B
Type
V
R
Tolerance
I
RM
for base width
Package
10
s
10ms
[V]
[V]
[A]
[A]
GSV22020
1500; 1600
60
200
3
A
GSV22023
1300;1400
60
230
3,4
A
GSV21026
1100; 1200
60
260
3,6
A
GSV21030
900; 1000
60
300
4
A
GSV21038
700; 800
60
380
4,5
A
GSV20050
500; 600
60
500
7,5
A
GXV22020
1450; 1550
50
200
3
B
GXV22023
1250; 1350
50
230
3,4
B
GXV21026
1050; 1150
50
260
3,6
B
GXV21030
850; 950
50
300
4
B
GXV21038
650; 750
50
380
4,5
B
GXV20050
450; 550
50
500
7,5
B
GXV24020
2850; 2950
50
200
3
B
GXV23023
2450; 2550
50
230
3,4
B
GXV23026
2050; 2150
50
260
3,6
B
GXV22030
1650; 1750
50
300
4
B
Document VST001
SURGE VOLTAGE
SUPPRESSORS
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
I
n the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data sheet
without notice.
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