Rev: 1.01 3/2002
1/12
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
256K x 16
4Mb Asynchronous SRAM
6, 7, 8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
FP-BGA
Commercial Temp
Industrial Temp
Features
Fast access time: 6, 7, 8, 10, 12 ns
CMOS low power operation: 170/150/130/105/95 mA at
minimum cycle time
Single 3.3 V power supply
All inputs and outputs are TTL-compatible
Byte control
Fully static operation
Industrial Temperature Option: 40 to 85C
Package:
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package
Description
The GS74117A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS74117A is available in a 6 x 10 mm Fine
Pitch BGA package.
Pin Descriptions
Fine Pitch BGA 256K x 16 Bump Configuration
Package X
6 x 10 mm Bump Pitch
Top View
Symbol
Description
A
0
A
17
Address input
DQ
1
DQ
16
Data input/output
CE
Chip enable input
LB
Lower byte enable input
(DQ1 to DQ8)
UB
Upper byte enable input
(DQ9 to DQ16)
WE
Write enable input
OE
Output enable input
V
DD
+3.3 V power supply
V
SS
Ground
NC
No connect
1
2
3
4
5
6
A
LB
OE
A
0
A
1
A
2
NC
B
DQ
1
UB
A
3
A
4
CE
DQ
16
C
DQ
3
DQ
2
A
5
A
6
DQ
15
DQ
14
D
V
SS
DQ
4
A
17
A
7
DQ
13
V
DD
E
V
DD
DQ
5
NC
A
16
DQ
12
V
SS
F
DQ
6
DQ
7
A
8
A
9
DQ
10
DQ
11
G
DQ
8
NC
A
10
A
11
WE
DQ
9
H
NC
A
12
A
13
A
14
A
15
NC
Rev: 1.01 3/2002
2/12
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Note: X: "H" or "L"
Truth Table
CE
OE
WE
LB
UB
DQ
1
to DQ
8
DQ
9
to DQ
16
V
DD
Current
H
X
X
X
X
Not Selected
Not Selected
ISB
1
, ISB
2
L
L
H
L
L
Read
Read
I
DD
L
H
Read
High Z
H
L
High Z
Read
L
X
L
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A
0
CE
WE
OE
DQ
1
A
17
Block Diagram
DQ
16
UB _____
LB _____
Rev: 1.01 3/2002
3/12
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Notes:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
0.5 to +4.6
V
Input Voltage
V
IN
0.5 to V
DD
+0.5
( 4.6 V max.)
V
Output Voltage
V
OUT
0.5 to V
DD
+0.5
( 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
55 to 150
o
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
V
DD
3.0
3.3
3.6
V
Supply Voltage for -6
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
--
V
DD
+0.3
V
Input Low Voltage
V
IL
0.3
--
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
--
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
40
--
85
o
C
Rev: 1.01 3/2002
4/12
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Notes:
1. Tested at T
A
= 25C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
1 uA
1 uA
Output High Voltage
V
OH
I
OH
= 4 mA
2.4
--
Output Low Voltage
V
OL
I
LO
= +4 mA
--
0.4 V
Power Supply Currents
Parameter Symbol
Test Conditions
0 to 70C
40 to 85C
Unit
6 ns
7 ns
8 ns
10 ns 12 ns
6 ns
7 ns
8 ns
10 ns 12 ns
Operating
Supply
Current
I
DD
CE V
IL
All other inputs
S
V
IH
or V
IL
Min. cycle time
I
OUT
= 0 mA
170
150
130
105
90
180
160
140
115
100
mA
Standby
Current
I
SB1
CE S V
IH
All other inputs
S
V
IH
or V
IL
Min. cycle time
40
28
30
25
22
50
38
40
35
32
mA
Standby
Current
I
SB2
CE S V
DD
- 0.2V
All other inputs
S
V
DD
- 0.2V or 0.2V
10
20
mA
Rev: 1.01 3/2002
5/12
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
AC Test Conditions
DQ
VT = 1.4 V
50W 30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589W
434W
5pF
1
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
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