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Электронный компонент: 840E18A

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Rev: 1.08 3/2001
1/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS840E18/32/36AT/B-200/180/166/150/100
256K x 18, 128K x 32, 128K x 36
4Mb Sync Burst SRAMs
200 MHz100 MHz
3.3 V V
DD
3.3 V and 2.5 V I/O
TQFP, BGA
Commercial Temp
Industrial Temp
Features
FT pin for user-configurable flow through or pipelined
operation
Dual Cycle Deselect (DCD) operation
3.3 V +10%/5% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipelined mode
Byte Write (BW) and/or Global Write (GW) operation
Common data inputs and data outputs
Clock control, registered, address, data, and control
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC standard 100-lead TQFP or 119-Bump BGA package
Functional Description
Applications
The GS840E18/32/36A is a 4,718,592-bit (4,194,304-bit for
x32 version) high performance synchronous SRAM with a 2-
bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications ranging from DSP main store
to networking chip set support. The GS84018/32/36A is
available in a JEDEC standard 100-lead TQFP or 119-Bump
BGA package.
Controls
Addresses, data I/Os, chip enables (E
1
, E
2
, E
3
), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin/bump (pin 14 in the TQFP and
bump 5R in the BGA). Holding the FT mode pin/bump low
places the RAM in Flow Through mode, causing output data to
bypass the Data Output Register. Holding FT high places the
RAM in Pipelined mode, activating the rising-edge-triggered
Data Output Register.
DCD Pipelined Reads
The GS840E18/32/36A is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using byte write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS840E18/32/36A operates on a 3.3 V power supply and
all inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
DDQ
) pins are used to de-couple output noise
from the internal circuit.
200
180
166
150
100
Pipeline
3-1-1-1
tCycle
t
KQ
I
DD
5.0 ns
3.0 ns
205 mA
5.5 ns
3.2 ns
185 mA
6.0 ns
3.5 ns
170 mA
6.6 ns
3.8 ns
155 mA
10 ns
4.5 ns
105 mA
Flow
Through
2-1-1-1
t
KQ
tCycle
I
DD
7.5 ns
8.8 ns
115 mA
8 ns
9.1 ns
115 mA
8.5 ns
10 ns
105 mA
10 ns
10 ns
105 mA
12 ns
15 ns
80 mA
Rev: 1.08 3/2001
2/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
Preliminary
GS840E18/32/36AT/B-200/180/166/150/100
GS840E18A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
B1
DQ
B2
V
SS
V
DDQ
DQ
B3
DQ
B4
V
DD
NC
V
SS
DQ
B5
DQ
B6
V
DDQ
V
SS
DQ
B7
DQ
B8
DQ
B9
V
SS
V
DDQ
V
DDQ
V
SS
DQ
A8
DQ
A7
V
SS
VDDQ
DQ
A6
DQ
A5
V
SS
NC
VDD
ZZ
DQ
A4
DQ
A3
VDDQ
V
SS
DQ
A2
DQ
A1
V
SS
VDDQ
L
B
O
A
5
A
4
A
3
A
2
A
1
A
0
N
C
N
C
V
S
S
V
D
D
N
C

N
C

A
1
0

A
1
1

A
1
2

A
1
3

A
1
4

A
1
6
A
6
A
7
E
1
E
2
N
C
N
C
B
B
B
A
E
3
C
K
G
W
B
W
V
D
D
V
S
S
G
A
D
S
C
A
D
S
P
A
D
V
A
8
A
9

A
1
5
256K x 18
Top View
DQ
A9
A
17
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 1.08 3/2001
3/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
Preliminary
GS840E18/32/36AT/B-200/180/166/150/100
GS840E32A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
V
SS
V
DDQ
V
DDQ
V
SS
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
V
SS
V
DDQ
L
B
O
A
5
A
4
A
3
A
2
A
1
A
0
N
C
N
C
V
S
S
V
D
D
N
C

N
C

A
1
0

A
1
1

A
1
2

A
1
3

A
1
4

A
1
6
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
C
K
G
W
B
W
V
D
D
V
S
S
G
A
D
S
C
A
D
S
P
A
D
V
A
8
A
9

A
1
5
128K x 32
Top View
DQ
B5
NC
DQ
B7
DQ
B8
DQ
B6
DQ
A6
DQ
A5
DQ
A8
DQ
A7
NC
DQ
C7
DQ
C8
DQ
C6
DQ
D6
DQ
D8
DQ
D7
NC
DQ
C5
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 1.08 3/2001
4/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
Preliminary
GS840E18/32/36AT/B-200/180/166/150/100
GS840E36A 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
V
SS
V
DDQ
V
DDQ
V
SS
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
V
SS
V
DDQ
L
B
O
A
5
A
4
A
3
A
2
A
1
A
0
N
C
N
C
V
S
S
V
D
D
N
C

N
C

A
1
0

A
1
1

A
1
2

A
1
3

A
1
4

A
1
6
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
C
K
G
W
B
W
V
D
D
V
S
S
G
A
D
S
C
A
D
S
P
A
D
V
A
8
A
9

A
1
5
128K x 36
Top View
DQ
B5
DQ
B9
DQ
B7
DQ
B8
DQ
B6
DQ
A6
DQ
A5
DQ
A8
DQ
A7
DQ
A9
DQ
C7
DQ
C8
DQ
C6
DQ
D6
DQ
D8
DQ
D7
DQ
D9
DQ
C5
DQ
C9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 1.08 3/2001
5/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
Preliminary
GS840E18/32/36AT/B-200/180/166/150/100
TQFP Pin Description
Pin Location
Symbol
Type
Description
37, 36
A
0
, A
1
I
Address field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81,44, 45, 46,
47, 48, 49, 50
A
2
A
16
I
Address Inputs
80
A
17
I
Address Inputs (x18 versions)
52, 53, 56, 57, 58, 59, 62, 63
68, 69, 72, 73, 74, 75, 78, 79
2, 3, 6, 7, 8, 9, 12, 13
18, 19, 22, 23, 24, 25, 28, 29
DQ
A1
DQ
A8
DQ
B1
DQ
B8
DQ
C1
DQ
C8
DQ
D1
DQ
D8
I/O
Data Input and Output pins. (x32, x36 Version)
51, 80, 1, 30
DQ
A9
, DQ
B9
,
DQ
C9
, DQ
D9
I/O
Data Input and Output pins (x36 Version)
51, 80, 1, 30
NC
No Connect (x32 Version)
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
DQ
A1
DQ
A9
DQ
B1
DQ
B9
I/O
Data Input and Output pins (x18 Version)
51, 52, 53, 56, 57
75, 78, 79
1, 2, 3, 6, 7
25, 28, 29, 30
NC
-
No Connect (x18 Version)
87
BW
I
Byte Write--Writes all enabled bytes; active low
93, 94
B
A
, B
B
I
Byte Write Enable for DQ
A
, DQ
B
Data I/'s; active low
95, 96
B
C
, B
D
I
Byte Write Enable for DQ
C
, DQ
D
Data I/Os; active low
(x32, x36 Version)
95, 96
NC
-
No Connect (x18 Version)
89
CK
I
Clock Input Signal; active high
88
GW
I
Global Write Enable--Writes all bytes; active low
98, 92
E
1
, E
3
I
Chip Enable; active low
97
E
2
I
Chip Enable; active high
86
G
I
Output Enable; active low
83
ADV
I
Burst address counter advance enable; active low
84, 85
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
64
ZZ
I
Sleep Mode control; active high
14
FT
I
Flow Through or Pipeline mode; active low
31
LBO
I
Linear Burst Order mode; active low
15, 41, 65, 91
V
DD
I
Core power supply
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
V
SS
I
I/O and Core Ground
4, 11, 20, 27, 54, 61, 70, 77
V
DDQ
I
Output driver power supply
16, 38, 39, 42, 43, 66
NC
-
No Connect