Features
l
16-element array
l
For simple measurement
Applications
l
Near Infrared (NIR) spectrophotometer
P H O T O D I O D E
InGaAs PIN photodiode array
16-element array
G7150/G7151-16
s General ratings
Parameter
G7150-16
G7151-16
Unit
Package
DIP
-
Active area
0.45 1 ( 16 elements)
0.08 0.2 ( 16 elements)
mm
s Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Operating temperature
Topr
-25 to +70
C
Storage temperature
Tstg
-25 to +70
C
s Electrical and optical characteristics (Ta=25
C, per 1 element)
G7150-16
G7151-16
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
-
0.9 to 1.7
-
-
0.9 to 1.7
-
m
P eak sensitiv ity w av elength
p
-
1.55
-
-
1.55
-
m
=1.3 m
0.9
-
0.9
-
Photo sensitivity
S
=1.55 m
0.95
-
0.95
-
A/W
Dark current
I
D
V
R
=1 V
-
5
25
-
0.2
1
nA
Cut-off frequency
fc
V
R
=1 V, R
L
=50
=1.3 m, -3 dB
-
30
-
-
300
-
MHz
Terminal capacitance
Ct
V
R
=1 V, f=1 MHz
-
100
-
-
10
-
pF
Shunt resistance
Rsh
V
R
=10 mV
-
100
-
-
1000
-
M
Detectivity
D
=
p
-
5 10
12
-
-
5 10
12
-
cmHz
1/2
/W
Noise equivalent power
NEP
=
p
-
2 10
-14
-
-
3 10
-15
-
W/Hz
1/2
1
InGaAs PIN photodiode array
G7150/G7151-16
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
2.0
0.5
0
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
WAVELENGTH (m)
TEMPERATURE COEFFICIENT (%/
C)
(Typ. Ta=25
C)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
10 G
-40
-20
0
40
60
80
100
AMBIENT TEMPERATURE (C)
SHUNT RESISTANCE
1 G
10 M
1 M
100 M
100 G
(Typ. V
R
=10 mV)
20
G7150-16
G7151-16
0.25
0.5 0.1
0.6 0.3
ACTIVE AREA
(16 ) 0.08 0.2
22.9 0.3
7.5 0.2
2.2 0.3
4.0 MIN.
1.1 0.2
2.45 0.15
0.46
0.8 0.3
PIN No.
DETECTOR
1
3
5
7
9
PIN No.
DETECTOR
KC
11
13
15
16
PIN No.
DETECTOR
14
12
KC
10
8
PIN No.
DETECTOR
6
4
2
WINDOW
PHOTOSENSITIVE
SURFACE
INDEX MARK
1
10
100
1000
10000
0.01
0.1
1
10
(Typ. Ta=25 C)
G7150-16
G7151-16
DARK CURRENT (pA)
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE (pF)
REVERSE VOLTAGE
1
10
1000
100
0.01
0.1
1
10
(Typ. Ta=25 C, f=1 MHz)
G7150-16
G7151-16
Cat. No. KIRD1043E04
May 2003 DN
s
Spectral response
KIRDB0002EB
s
Photo sensitivity temperature
characteristic
KIRDB0042EA
s
Dark current vs. reverse voltage
s
Terminal capacitance vs.
reverse voltage
s
Shunt resistance vs. ambient
temperature
KMIRB0013EA
s
Dimensional outlines (unit: mm)
KIRDA0144EB
KIRDA0030ED
KIRDB0254EA
KIRDB0255EB
G7150-16
G7151-16
PIN No.
DETECTOR
1
3
5
7
9
PIN No.
DETECTOR
KC
11
13
15
16
PIN No.
DETECTOR
14
12
KC
10
8
PIN No.
DETECTOR
6
4
2
0.25
0.5 0.1
0.6 0.3
WINDOW
ACTIVE AREA
(16 ) 0.45 1
22.9 0.3
7.5 0.2
2.2 0.3
4.0 MIN.
1.1 0.2
2.45 0.15
0.46
1.0 0.2
PHOTOSENSITIVE
SURFACE
INDEX MARK
2
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