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Электронный компонент: K1713-05

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K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis.
Features
l Wide spectral response range
l Allows same optical path design
l 4-pin TO-5 package
Applications
l Spectrophotometers
l Laser monitors
U V T O I R D E T E C T O R
Two-color detector
Wide spectral response range from UV to IR
K1713-05/-08/-09
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active
area
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Package
Cooling
Detector
element
(mm)
(V)
(C)
(C)
Si
2.4 2.4
5
K1713-05
InGaAs
f0.5
20
Si
2.4 2.4
5
K1713-08
InGaAs
f1
2
Si
2.4 2.4
5
K1713-09
TO-5
No-cooled
InGaAs
f1
10
-40 to +70
-55 to +85
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Dark current
I
D
V
R
=10 mV
Peak
sensitivity
wavelength
lp
Photo
sensitivity
S
l=lp
Typ.
Max.
Shunt
Resistance
Rsh
D*
l=lp
Rise time
tr
V
R
=0 V
R
L
=1 kW
10 to 90 %
Terminal
capacitance
Ct
V
R
=5 V
f=1 MHz
Type No.
Detector
element
(m)
(A/W)
(nA)
(nA)
(MW)
(cm Hz
1/2
/W)
(ns)
(pF)
Si
0.94
0.45
30 (pA)
150 (pA)
300
1.4 10
13
200 *
3
60 *
5
K1713-05
InGaAs
1.55
0.55
0.5 *
1
2.5 *
1
300
3.5 10
12
1.5
*
4
12
Si
0.94
0.45
30 (pA)
150 (pA)
300
1.4 10
13
200 *
3
60 *
5
K1713-08
InGaAs
2.30
0.60
15 (A) *
2
75 (A) *
2
3 (kW)
2.3 10
10
23
*
4
200 *
2
Si
0.94
0.45
30 (pA)
150 (pA)
300
1.4 10
13
200 *
3
60 *
5
K1713-09
InGaAs
1.55
0.55
1 *
1
5 *
1
100
3.5 10
12
7
*
4
90
*1: V
R
=5 V
*2: V
R
=1 V
*3: l=655 nm
*4: V
R
=5 V, R
L
=50 W
*5: V
R
=0 V, f=10 kHz
1
Two-color detector
K1713-05/-08/-09
WAVELENGTH (m)
(Typ. Ta=25 C)
0.3
0.2
0.1
0.7
0.6
0.5
0.4
0.2
0
1.2
0.4
0.6
0.8
1.0
PHOTO SENSITIVITY
(A/W)
KIRDB0199EA
(Typ. Ta=25 C)
WAVELENGTH (m)
0.8
0
2.8
2.0
2.2
2.4
2.6
1.0
1.2
1.4
1.6
1.8
0.2
0.1
0.7
0.6
0.5
0.4
0.3
PHOTO SENSITIVITY
(A/W)
K1713-08
K1713-05/-09
KIRDB0211EA
REVERSE VOLTAGE (V)
0.01
10 pA
10
0.1
1
100 pA
1 nA
DARK CURRENT
(Typ. Ta=25 C)
KIRDB0200EA
1
A
10
A
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
100 nA
1 nA
100 pA
10 nA
100
A
(Typ. Ta=25
C
)
K1713-08
K1713-05
K1713-09
KIRDB0201EA
s Spectral response
Si photodiode
s Dark current vs. reverse voltage
InGaAs PIN photodiode
Si photodiode
InGaAs PIN photodiode
2
Two-color detector
K1713-05/-08/-09
ELEMENT TEMPERATURE (C)
-40
-20
100 k
100
0
20
40
60
80
10 T
1 T
100 G
10 G
1 G
100 M
10 M
1 M
SHUNT RESISTANCE
(Typ. V
R
=10 mV)
10 G
-40
-20
0
40
60
80
100
ELEMENT TEMPERATURE (C)
SHUNT RESISTANCE
1 G
10 k
100
1 k
100 k
10 M
1 M
100 M
100 G
(Typ. V
R
=10 mV)
20
K1713-09
K1713-05
K1713-08
1 nF
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 pF
1 pF
100 fF
10 pF
10 nF
(Typ. Ta=25 C, f=1 MHz)
K1713-05
K1713-09
K1713-08
REVERSE VOLTAGE (V)
0.01
1 pF
10
0.1
1
10 pF
100 pF
TERMINAL CAPACITANCE
(Typ. Ta=25 C, f=10 kHz)
s Terminal capacitance vs. reverse voltage
KIRDB0202EA
KIRDB0203EA
KIRDB0204EA
KIRDB0205EA
Si photodiode
InGaAs PIN photodiode
Si photodiode
InGaAs PIN photodiode
s Shunt resistance vs. element temperature
3
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Two-color detector
K1713-05/-08/-09
Cat. No. KIRD1040E02
Sep. 2001 DN
KIRDA0147EB
0.43
LEAD
30 MIN.
8.3 0.2
3.2 0.3
4.3 0.3
6.5 0.3
WINDOW
6.3 0.1
9.1 0.3
5.1 0.2
InGaAs
Si
Si (CATHODE)
Si (ANODE)
InGaAs (CATHODE)
InGaAs (ANODE)
s Dimensional outline (unit: mm)
4