PRELIMINAR
Y
EB-CCD
TV SCAN RATE TYPE : N7640
SLOW SCAN TYPE : N7220
For Low-Light-Level Imaging with high S/N ratio
The EB-CCD is an absolutely new high-sensitivity imaging
device that employs the "Electron Bombardment (EB)" effect for
image intensification. The EB-CCD basically consists of a
photocathode and a CCD chip arranged in parallel in a vacuum
tube. An optical image is converted at the photocathode into an
electron image, which is then accelerated and directly bom-
bards the CCD surface to produce electron multiplication. Even
a low-light-level image can be brought into view with a high S/N
ratio.
Two types of EB-CCD are available depending on the readout
method: the N7640 designed to operate at the TV scan rate
and the N7220 for slow scan readout. Both types are compact
and simple in structure, and deliver high sensitivity yet ensure
high S/N ratio. The EB-CCD will open up new applications as
the next generation of low-light-level imaging devices.
TAPPB0068EA
SENSITIVITY (V
.
J
-1
.
cm
-2
)
200
1
10
100
1000
300
400
500
600
700
800
900
1000
1100
EB-CCD
N7640
NORMAL 2/3" CCD
WAVELENGTH (nm)
SENSITIVITY COMPARISON
(Calculated data)
IMAGING COMPARISON
Using Resolution Test Chart
s
Imaging Conditions
Object illuminance: 0.1 lx
Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2
EB-CCD N7640
Commercial 2/3-inch CCD
OVERVIEW
qHigh sensitivity video camera
Semiconductor wafer inspection
Real time fluorescence observation
Biochemical emission imaging
Biophoton imaging
APPLICATIONS
FEATURES
TV scan rate type
q
Resolution
400 TV lines
q
Gain
700
q
Detection limit
*1
0.3 mlx
Slow scan type
q
Resolution
450 TV lines
q
Gain
1300
q
Detection limit
Detectable down to single photon
region
*1: Minimum illuminance on the photocathode required to produce an image.
TII B0020EA
100
200
300
400
500
600 700
800
900 1000
10
-2
10
-1
10
0
10
1
10
2
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE
SENSITIVITY
QUANTUM
EFFICIENCY
*3: At 25
C, MPP (Multi-Pinned Phase) operation, 33 ms/frame
*4: At 0
C, MPP (Multi-Pinned Phase) operation
Parameter
Parameter
Parameter
N7640
N7220
-6
700
400
9.2
!
6.8
Proximity-focused
Synthetic silica
Multialkali
Poly Oxy Methylene (POM)
Teflon
53
!
16.5 (excluding lead pins)
Focusing Method
Window Material
Photocathode
Maximum Supply Voltage
Gain
(Typ.)
*2
Limiting Resolution
(Typ.)
Effective Area (H
!
V)
Casing Material
Lead Wire Sheath
Dimension
q
EB-CCD
-8
1300
450
12.2
!
12.2
Unit
N7640
N7220
Unit
Unit
-
-
-
kV
-
TV lines
mm
-
-
mm
Frame transfer
2/3 inch format
14
!
14
658
!
490
65
!
10
3
*3
80 e- / (pixelframe)
100
14
2 phases
2 phases
MOSFET source follower, two stages
with load
Full frame transfer
1 inch format
24
!
24
512
!
512
200
!
10
3
*4
300 e- / (pixels)
50
1
2 phases
2 phases
MOSFET source follower, one stage
Drive Method
CCD Format
Pixel Size
Number of Effective Pixels (H
!
V)
Saturation Charge
Dark Current
Readout Noise
*5
CCD Readout Frequency
Vertical Clock
Horizontal Clock
Output
q
Internal CCD
q
Ratings
-
-
mm
-
electrons
-
e- RMS
MHz
-
-
-
Min.
Max.
-30
-40
Operating Temperature Range
Storage Temperature Range
+40
+40
C
C
*2: N7640
at -6
kV, N7220 at -8
kV
*5: N7640 at 12 MHz, N7220 at 150 kHz
SPECIFICATIONS
SPECTRAL RESPONSE
TV Rate Type
(Frame Transfer CCD)
N7640
Slow Scan Type
(Full Frame Transfer CCD)
N7220
TAPPA0037EA
EFFECTIVE
IMAGING AREA
9.2(H)
!
6.8(V) MIN.
PHOTOCATHODE
(MULTIALKALI)
INPUT WINDOW
(SYNTHETIC SILICA)
INDEX MARK
Output Side
Input Side
53
-
0.3
+0
29
19
16.5
0.3
15.2
0.2
5
0.3
2.0
0.3
6.9
0.1
0.5
0.2
BLACK
RED
1.78
0.15
CABLE LENGTH
200 MIN.
6.8
9.2
3.57
LEAD (TEFLON COVER)
RED
: PHOTOCATHODE (HV)
BLACK
: OUTER FLANGE (GND)
TAPPA0034ED
53
0.3
+0
29
19
15.2
0.2
5
0.3
2
0.2
5.9
0.1
0.5
0.2
BLACK
RED
1.78
11
=19.6
16.5
0.3
EFFECTIVE
IMAGING AREA
12.2
!
12.2 MIN.
PHOTOCATHODE
(MULTIALKALI)
INPUT WINDOW
(SYNTHETIC SILICA)
INDEX MARK
Output Side
Input Side
CABLE LENGTH
200 MIN.
LEAD (TEFLON COVER)
RED
: PHOTOCATHODE (HV)
BLACK
: OUTER FLANGE (GND)
Exposure Time: 0.02 s
Exposure Time: 20 s
PHOTON COUNTING IMAGING EXAMPLE
Slow Scan Type N7220
(Resolution 450 TV lines)
Light source
Object illuminance
Lens F value
Supply voltage
Ambient temperature
Tungsten lamp
2
!
10
-5
lx
5.6
-8 kV
-25 C
q
Conditions
Object Illuminance
0.00002
lx
DIMENSIONAL OUTLINES
(Unit: mm)
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
HOMEPAGE URL http://www.hamamatsu.com
Subject to local technical requirements and regulations, availability of products in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies and omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2000 Hamamatsu Photonics K.K.
TAPP1032E01
OCT. 2000 (9910) IP
Printed in Japan (1000)
q
C8080
TAPPA0041EA
C8080
40
40
66
9
9
32
1/4-20 UNC, DEPTH: 8
4-M3, DEPTH: 8
90
160
12
4.1
75
41
8
C MOUNT
DEPTH: 6
SENSITIVITY
ON/OFF
VIDEO
CONTROL
MIN.
MAX.
HV
POWER
EB-CCD CAMERA
GAIN CONTROL
H.V. SWITCH
VIDEO SIGNAL OUTPUT (BNC)
POWER INPUT
(HIROSE HR10A-R13R-20SB)
EB-CCD (N7640)
Frame transfer CCD
185 to 900
200 to 700
8.58
!
6.86 (2/3 inch format)
640
!
480
14
!
14
130 000
60 Hz interlace
RS-170 (EIA)
0 to +40
-10 to +40
Below 90 (no condensation)
+15
(500 mA)
, -15
(500 mA)
, +5
(500 mA)
90
!
75
!
160
Approx. 1.4
EB-CCD
Image Sensor
Spectral Response
Gain
Effective Area
Number of Effective Pixels (H
!
V)
Pixel Size
Saturation Charge
Frame Rate
Image Output Method
Operating Temperature Range
Storage Temperature Range
Humidity Range
Input Voltage
(Input Current)
Dimension (W
!
H
!
D)
Weight
85 to 135 (50 Hz, 60 Hz)
90
161
!
44
!
213
Approx. 1.2
-
-
nm
-
mm
-
m
electrons
-
-
C
C
%
V
mm
kg
V ac
VA
mm
kg
Input Voltage
Maximum Power Consumption
Dimension (W
!
H
!
D)
Weight
q
SPECIFICATIONS
q
DEDICATED POWER SUPPLY C8081 (Option)
Unit
Unit
Parameter
Specifications
Parameter
Specifications
EB-CCD
CAMERA
C8080
The C8080 is an EB-CCD camera incorporating a TV scan type EB-CCD (N7640). The
C8080 is designed for simple use and functions, yet capable of imaging at very low
light levels. Hamamatsu also provides the C8081 power supply ideal for use with the
C8080 EB-CCD camera.
DIMENSIONAL OUTLINES
(Unit: mm)
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