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Электронный компонент: P1114-01

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CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
l Variety of package size
l Highly resistant to moisture and dust
Applications
l Sensor for office machine
l Safety device for heating system and boiler
(flame monitor for oil burner)
l Night/day check sensor and sunlight sensor for air conditioner
l Alarm and safety sensor
V I S I B L E D E T E C T O R
CdS photoconductive cell
Hermetically sealed for high reliability
Metal package type
I Absolute maximum ratings / Characteristics (Typ. Ta=25 C, unless otherwise noted)
Absolute maximum ratings
Characteristics *
Resistance *
Response time 10 lx *
#
Supply
voltage
Power
dissipation
P
Ambient
temperature
Ta
Peak
sensitivity
wavelength
lp
10 lx, 2856 K
0 lx *
!
g
*
"
Rise time
tr
Fall time
tf
Type No.
Dimensional
outline
(Vdc)
(mW)
(C)
(nm)
Min.
(kW)
Max.
(kW)
Min.
(MW)
100 to 10 lx
(ms)
(ms)
5M type (TO-18)
P1114-01
630
13
39
1
60
25
P1114-04
100
30
-30 to +50
570
15
45
10
0.80
40
20
6M type (f5.5)
P930
150
50
-30 to +70
560
7
23
0.5
0.68
60
90
8M type (TO-5)
P201B
-30 to +50
560
21
63
20
0.85
25
20
P201D
100
-30 to +60
520
20
60
10
0.90
30
10
P368
14
43
P380
200
50
-30 to +50
620
4.4
13
20
0.85
35
20
P467
-30 to +60
520
8
24
5
0.90
50
20
P534
100
100
-30 to +80
560
1.3
3.7
0.05
0.55
70
100
12M type (TO-8)
P621
150
570
1.3
3.7
0.3
0.75
80
40
P3872
400
300
-30 to +60
540
5
15
1.0
0.80
40
30
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after removal of light of 10lx.
*4: Typical gamma characteristics (within0.10 variations) between 100lx to 10lx
E
, E
: illuminance 100lx, 10lx
R
, R
: resistance at 100lx and 10lx respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (resistance
when fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance
level to 37 %.
log (R
100
) - log (R
10
)
log (E
100
) - log (E
10
)
=
100
10
1
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
CdS photoconductive cell
Metal package type
Cat. No. KCDS1004E03
Mar. 2003 DN
3.9 0.2
30 MIN.
0.3
LEAD
PHOTOSENSITIVE
SURFACE
5.35 0.2
4.75 0.1
WINDOW 3.0 0.2
2.5
3.6 0.2
30 MIN.
PHOTOSENSITIVE
SURFACE
WINDOW 3.5 0.2
3.4
6.5 0.3
5.5 0.1
0.3
LEAD
3.5 0.3
30 MIN.
PHOTOSENSITIVE
SURFACE
5.0
9.1 0.3
8.1 0.1
WINDOW 5.9 0.2
0.4
LEAD
5.0 0.3
30 MIN.
PHOTOSENSITIVE
SURFACE
13.9 0.3
12.4 0.2
WINDOW
10.9 0.3
7.5
0.45
LEAD
1000
100
10
1
0.1
0.1
1
10
100
ILLUMINANCE (lx)
RESISTANCE (k
)
(Typ. Ta=25 C, light source: 2856 K)
P534
P380
P621
P368
P1114-01/-04
P201D
P930
P201B
P467
P3872
12M type (TO-8)
I Dimensional outlines (unit: mm)
KCDSA0007EB
5M type (TO-18)
KCDSA0008EA
6M type
KCDSA0009EB
8M type (TO-5)
KCDSA0010EA
I Resistance vs. illuminance
KCDSB0022EB
2