I N F R A R E D D E T E C T O R
InAs photovoltaic detector
High-speed, low noise photovoltaic IR detectors
P8079 series, P7163
Features
l Thermoelectrically cooled type: high sensitivity
and high-speed response
l Metal dewar type available for low light measurement
l Long-wavelength cut-off of up to 3.8 m
l Easy-to-use detector/preamp modules available
Applications
l Gas analysis
l Infrared radiation measurement
l Infrared spectrophotometry
l FTIR
Accessories (Optional)
l Heatsink for one-stage TE-cooled type
A3179
l Heatsink for two-stage TE-cooled type
A3179-01
l Temperature controller
C1103-04
l Infrared detector module with preamp
P4631-01 (P8079-21)
l Custom amplifiers for InAs photovoltaic detector
InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and
lower noise.
I Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
Package
Cooling
(mm)
(mW)
(V)
(C)
(C)
P8079-01
/S
TO-5
Non-cooled
-
P8079-11
One-stage TE-cooled
P8079-21
/S
TO-8
Two-stage TE-cooled
0.2
P7163
/S
Metal dewer
LN
2
f1
-
0.5
-40 to +60
-55 to +60
* Window material S: sapphire glass
I Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
condition
Element
temperature
T
Peak
sensitivity
wavelength
lp
Cut-off
wavelength
lc
Photo
sensitivity
S
l=lp
Shunt
resistance
Rsh
D*
(lp, 1200, 1)
NEP
l=lp
Rise time
tr
V
R
=0 V
R
L
=50 W
0 to 63 %
Terminal
capacitance
Ct
V
R
=0 V
f=1 MHz
Type No.
(C)
(m)
(m)
(A/W)
(W)
Min.
(cmHz
1/2
/W)
Typ.
(cmHz
1/2
/W)
(W/Hz
1/2
)
(s)
(pF)
P8079-01
25
3.45
3.8
1.1
10
1.5 10
9
2 10
9
4.4 10
-11
0.1
80
P8079-11
-10
3.30
3.6
80
7.5 10
9
1 10
10
8.9 10
-12
10
P8079-21
-30
3.25
3.5
200
1.5 10
10
2 10
10
4.4 10
-12
5
P7163
-196
3.00
3.1
1.3
1 10
5
3.5 10
11
6 10
11
1.5 10
-13
0.1
150
1
InAs photovoltaic detector
P8079 series, P7163
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
2.0
1.5
1.0
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
2.5
3.0
4.0
3.5
4.5
T= -10 C
T=25 C
T= -30 C
(Typ.)
KIRDB0165EA
KIRDB0183EA
WAVELENGTH (m)
(Typ.)
10
9
10
8
10
11
10
12
1
10
10
6
D
*
(
,1200,1) (cm
Hz
1/2
/W)
2
3
4
5
P7163 (T= -196 C)
P8079-01 (T=25 C)
P8079-21 (T= -30 C)
ELEMEMT TEMPERATURE (C)
SHUNT RESISTANCE
-20
-40
1
10
1 k
100
0
20
40
I S/N vs. chopping frequency (P7163)
KIRDB0064ED
KIRDB0182EA
CHOPPING FREQUENCY (Hz)
S/N (ARB. UNIT)
(Typ.)
10
2
10
3
10
1
10
0
10
3
10
4
10
5
10
6
10
2
LOAD RESISTANCE: 1 k
SUPPLY VOLTAGE: 0 V
ELEMENT TEMPERATURE: -196 C
S
N
I Shunt resistance vs. element temperature
I Spectral response
I Spectral response (D*)
2
InAs photovoltaic detector
P8079 series, P7163
CHOPPER
1200 Hz
BLACK BODY
500 K
DETECTOR
BAND-PASS
FILTER
r.m.s.
METER
fo=1200 Hz
f=120 Hz
INCIDENT ENERGY: 2.64 W/cm
2
I Measurement circuit
KIRDC0004EA
10
20
0
0.4
0.8
1.2
1.6
TE-COOLED CURRENT (A)
ELEMENT TEMPERATURE (
C)
0
-40
-50
-20
-30
-10
30
(Typ. Ta=25 C, thermal resistance of heat-sink=3 C/W)
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
I Current vs. voltage of TE-cooled type
KIRDB0115EB
KIRDB0181EA
VOLTAGE (V)
CURRENT (A)
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0
1.6
0.6
1.4
0.2
1.0
0.4
1.2
0.8
0
0.8
0.6
0.4
0.2
1.2
1.0
ONE-STAGE
TE-COOLED
TWO-STAGE
TE-COOLED
I Thermistor temperature characteristic
KIRDB0116EA
ELEMENT TEMPERATURE (
C)
RESISTANCE (
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
I Cooling characteristics of TE-cooled type
3
InAs photovoltaic detector
P8079 series, P7163
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KIRD1027E04
Oct. 2002 DN
0.45
LEAD
1.0 MAX.
9.1 0.3
WINDOW
5.5 0.1
2.3 0.2
4.3 0.2
18 MIN.
0.4 MAX.
8.1 0.1
5.1 0.2
PHOTOSENSITIVE
SURFACE
CASE
I
I
I
I
I Dimensional outlines (unit: mm)
KIRDA0119EA
KIRDA0120EA
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
a
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
P8079-11
PHOTOSENSITIVE
SURFACE
0.45
LEAD
P8079-21
4.5 0.2
a
6.9 0.2
DETECTOR (ANODE)
NC
DETECTOR (CATHODE)
51 1
37 1
8.5 0.5
66.8 1
10 1
172 2
PHOTOSENSITIVE
SURFACE
PUMP-OUT
PIPE 9.5
OUTPUT
PIN
LN
2
FILL PORT 12.5
32 1
6.5
72 1
95 1
102 1
28.5
63.5 1
46 1
43 1
KIRDA0033EC
P8079-01
P8079-11/-21
P7163
4
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