GENERAL
FEATURES
High Quantum Efficiency ..................................... 14% at 254nm Typ.
Ruggedized, Low Profile Structure ..................... 20g's vibration
43mm in bulb length
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Base (temporary)
Suitable Socket
nm
nm
--
mm dia.
--
--
--
--
--
160 to 320
240
Cs-Te
21
Fused silica
Circular cage
10
12-pin base JEDEC No. B12-13
E678-12A (supplied)
Material
Minimum Useful Diameter
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R2078
MAXIMUM RATINGS (Absolute Maximum Values)
Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode
Extremely Improved Solar Blind Photocathode for Aerospace and
General Photometric Applications, 25mm (1 Inch) Diameter,
Ruggedized Low Profile Tube, Cs-Te Photocathode, 10-Stage, Head-on
CHARACTERISTICS (at 25
C)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Average Anode Current
2000
300
0.015
Vdc
Vdc
mA
Between Anode and Cathode
Between Anode and Last Dynode
Radiant at 254nm
Radiant at 254nm
Radiant at 365nm
Radiant at 550nm
Anode Pulse Rise Time
Electron Transit Time
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min. storage in darkness)
Time Response
Electrodes
Ratio
K
Dy1
3
Dy2
1
Dy3
1
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
Dy9
1
1
1
Dy10
P
20
2.0
10
3
--
--
1.0
10
5
--
--
--
29
1.5
10
4
1.5
1.6
10
-2
5.0
10
5
15
1.5
14
mA/W
A/W
A/W
A/W
--
pA
ns
ns
--
--
--
--
--
100
--
--
Typ.
Max.
PHOTOMULTIPLIER TUBE R2078
Figure 1: Typical Spectral Response
TPMH1226E01
AUG. 1998
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
TPMHB0559EA
Figure 2: Typical Gain Characteristics
TPMHB0560EA
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0438EA
TACCA0009EA
Socket
(E678-12A)
500
700
1000
1500
2000
3000
10
3
10
5
10
7
10
8
10
2
SUPPLY VOLTAGE (V)
GAIN
10
4
10
6
DY1
DY3
DY5
DY7
P
DY9
DY10
DY8
DY6
DY4
DY2
3
4
5
6
10
11
12
13
14
17
K
Temporary Base Removed
DY1
DY3
DY5
DY7
P
DY9
DY2
K
1
2
3
4
5
6
7
8
9
10
11
12
DY10
DY8
DY6
DY4
Bottom View
2
8
25.4
0.8
21MIN.
13MAX.
43.0
1.5
50MIN.
FACEPLATE
PHOTOCATHODE
SEMIFLEXIBLE
LEADS
12 PIN BASE
JEDEC
No. B12-43
37.3
0.5
40
47
5
8
15
17
2- 3.2
34
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
200
700
600
500
400
300
WAVELENGTH (nm)
PHOT
OCA
THODE RADIANT
SENSITIVITY
(mA/W)
QUANTUM EFFICIENCY
(%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
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