Transmission Mode Low Noise Bialkali Photocathode
28mm (1-1/8 inch) Diameter, Side-on Type
GENERAL
FEATURES
Parameter
Description
Unit
Spectral Response
Wavelength of Maximum Response
185 to 650
nm
nm
Photocathode
MateriaI
375
Structure
1.2
pF
Anode to Last Dynode
3.4
pF
Anode to All Other Electrodes
Minimum Effective Area
Low noise bialkali
mm
Window Material
16(H) 18(W)
Dynode
Direct Interelectrode Capacitances
Base
Applicable Socket Assembly
UV glass
Circular-cage
Number of Stages
9
11-pin base
JEDEC No. B11-88
E71721 (option)
SuitabIe Socket
E67811A (option)
Low Dark Current
Low Dark Counts (R2693P)
Wide Photocathode
Excellent Spatial Uniformity
Fast Time Response
APPLICATIONS
Fluorescence Detector
Chemiluminescence Detector
Raman Spectroscopy
Emission Spectroscopy
Light Scattering Detector
Figure 1: Electron Trajectories
Figure 2: Typical Spatial Uniformity
PHOTOMULTlPLlER TUBES
R2693, R2693P
TPMSC0003EB
LIGHT
PHOTOCATHODE
GLASS
BULB
FOCUSING
ELECTRODES
1st DYNODE
3rd DYNODE
2nd DYNODE
PHOTOELECTRONS
TPMSB0066EA
Y
X
100
80
60
40
20
0
8
4
0
4
8
RELATIVE SENSITIVITY (%)
DISTANCE FROM CENTER OF
PHOTOCATHODE (mm)
RELATIVE SENSITIVITY (%)
100
80
60
40
20
0
9
4.5
0
9
4.5
DISTANCE FROM CENTER OF
PHOTOCATHODE (mm)
SPOTSIZE : 1mm DIA
SUPPLY VOLTAGE : 1000V
WAVELENGTH : 400nm
X-Axis
Y-Axis
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 1993 Hamamatsu Photonics K.K.
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
1250
250
0.1
80 to +50
Vdc
Vdc
mA
Average Anode Current
A
Unit
Ambient Temperature
CHARACTERISTlCS (at 25 )
NOTES
Parameter
Min.
Typ.
Typ.
Max.
R2693
for General Purpose
R2693P
for Photon Counting
Cathode
Sensitivity
Anode Dark Current
E
(After 30min. storage in darkness)
Anode Dark Counts
E
Anode
Sensitivity
0.5
5.0
Anode Current
K
Stability
A:
B:
C:
D:
E:
F:
Averaged over any interval of 30 seconds maximum.
The light source is a tungsten filament lamp operated at a
distribution temperature of 2856K. Supply voltage is 100 volts
between the cathode and all other electrodes connected together
as anode.
The value is cathode output current when a blue filter(Corning
CS-5-58 polished to 1/2 stock thickness) is interposed
between the light source and the tube under the same condition
as Note B.
Measured with the same light source as Note B and with the
voltage distribution ratio shown in Table 1 below.
Measured with the same supply voltage and voltage distribution
ratio as Note D after removal of light.
ENI is an indication of the photon-limited signal-to-noise ratio. It
refers to the amount of light in watts to produce a signal-to-noise
ratio of unity in the output of a photomultiplier tube.
where q = Electronic charge (1.60 10
-19
coulomb).
ldb = Anode dark current(after 30 minutes storage)
in amperes.
G = Gain.
f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the
wavelength of peak response.
G:
H:
J:
K:
The rise time is the time for the output pulse to rise from 10%
to 90% of the peak amplitude when the entire photocathode is
illuminated by a delta function light pulse.
The electron transit time is the interval between the arrival of
delta function light pulse at the entrance window of the tube and
the time when the anode output reaches the peak amplitube. In
measurement, the whole photocathode is illuminated.
Also called transit time jitter. This is the fluctuation in electron
transit time between individual pulses in the single photoelectron
mode, and may be defined as the FWHM of the frequency
distribution of electron transit times.
Hysteresis is temporary instability in anode current after light and
voltage are applied.
ENI =
S
2q.ldb.G. f
Current Hysteresis
Voltage Hysteresis
0.5
1.0
Radiant at 375nm (Peak)
62
Blue
C
7.0
Anode Pulse Rise Time
G
1.2
Electron Transit Time
H
18
Transit Time Spread (FWHM)
J
1.0
Time Response
D
Quantum Efficiency at 375nm
30
50
20.5
Gain
D
ENI(Equivalent Noise Input)
F
Unit
PHOTOMULTlPLlER TUBES R2693, R2693P
Luminous
B
Radiant at 375nm
3.7 10
5
Luminous
D
300
100
8.6 10
-17
Min.
Max.
0.1
2.0
nA
0.5
1.0
%
%
62
mA/W
7.0
A/lm-b
1.2
18
1.0
ns
ns
ns
30
50
A/lm
20.5
%
3.7 10
5
A/W
300
A/lm
100
6 10
6
6 10
6
15
50
cps
3.9 10
-17
W
(1)Current Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-
ampere for 5 minutes. The light is then removed from the tube for a
minute. The tube is then re-illuminated by the previous light level
for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro
-ampere for 5 minutes. The light is then removed from the tube and
the supply voltage is quickly increased to 800 volts. After a minute,
the supply voltage is then reduced to the previous value and the
tube is re-illuminated for a minute to measure the variation.
Electrodes
R2693
K Dy1 Dy2 Dy3
Dy9
P
Ratio
1
1
1
1
1
SuppIy Voltage : 1000Vdc, K : Cathode,Dy : Dynode, P : Anode
Electrodes
R2693P
K Dy1 Dy2 Dy3
Dy9
P
Ratio
2.5 1.5
1
1
1
Table 1:Voltage Distribution Ratio
Hysteresis =
100(%)
lmax.
li
lmin.
TPMSB0002EA
TIME
max.
l
min.
l
i
l
ANODE
CURRENT
0
5
6
7 (minutes)
Figure 3: Typical Spectral Response
Figure 4: Typical Time Response
Figure 7: Typical Temperature Coefficient
of Anode Sensitivity
Figure 8: Typical Temperature Characteristics
of Dark Current(R2693)
(at 1000V, after 30minutes storage)
Figure 5: Typical Gain and Anode Dark Current (R2693)
Figure 6: Typical Single Photoelectron Pulse Height
Distribution (R2693P)
TPMSB0060EA
200
400
600
800
WAVELENGTH (nm)
0.01
0.1
1
10
100
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
TPMSB0061EA
200
100
80
60
40
20
10
8
6
4
2
1
300
500
700
1000
1500
TRANSIT TIME
RISE TIME
SUPPLY VOLTAGE (V)
TIME (ns)
10
8
10
7
10
6
10
5
10
4
10
3
10
2
10
1
GAIN
SUPPLY VOLTAGE(V)
300
400
500
600
800
1000
1300
GAIN
ANODE DARK CURRENT
TPMSB0062EA
ANODE DARK CURRENT(A)
10
5
10
6
10
7
10
8
10
9
10
10
10
11
10
12
1.0
0.8
0.6
0.4
0.2
0
0
200
400
600
800
1000
COUNTS PER CHANNEL
CHANNEL NUMBER(ch)
FULL SCALE(SIGNAL
+
DARK):1 10
FULL SCALE(DARK) :1 10
4
3
SIGNAL
+
DARK
WAVELENGTH OF INCIDENT LIGHT
SUPPLY VOLTAGE
SIGNAL+DARK COUNTS
DARK COUNTS
AMBIENT TEMPERATURE
: 400nm
: 1000vdc
: 5364cps
: 15cps
:
+
25
TPMSB0063EA
DARK
DISCRIMINATION LEVEL
+
1.2
+
0.8
+
0.4
0
0.4
0.8
1.2
200
300
400
500
600
700
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT(%/ )
TPMSB0064EA
TPMSB0065EA
100
10
1
0.1
20
80
100
TEMPERATURE (
C)
ANODE DARK CURRENT (nA)
0.01
0
40
60
TPMS1014E01
MAR. 1993
Figure 9: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 10: Optional Accessories (Unit: mm)
D Type Socket Assembly E717-21
Socket E678-11A
WarningPersonal Safety Hazards
Electrical ShockOperating voltages applied to
this device present a shock hazard.
Hamamatsu also provides C4900 series compact high voltage
power supplies and C6270 series DP type socket assemblies
which incorporate a DC to DC converter type high voltage
power supply.
R
1
to R
10
: 330k
C
1
to C
3
: 0.01 F
POTTING
COMPOUND
TACCA0002ED
R to R10
C1 to C3
: 330k
: 0.01 F
3.5
33.0 0.3
49.0 0.3
29
38.0 0.3
4.8
41.0 0.5
450 10
5
31.0 0.5
HOUSING
(INSULATOR)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
C3
C2
C1
SIGNAL GND
SIGNAL OUTPUT RG-174/U
(BLACK)
HV
AWG22 (VIOLET)
P
K
10
POWER SUPPLY GND
AWG22 (BLACK)
SOCKET
PIN No.
PMT
9
8
7
6
5
4
3
2
1
11
PHOTOMULTlPLlER TUBES R2693, R2693P
TPMSA0007EA
1
2
4
3
5
7
6
8
9
10
K
DY1
DY2
DY3
DY4
DY5
DY6
DY7
DY8
DY9
P
DIRECTION OF LIGHT
11
29.0 1.7
18MIN.
PHOTOCATHODE
16MIN.
49.0 2.5
76MAX.
90MAX.
34MAX.
11 PIN BASE
JEDEC No. B11-88
HA COATING
BOTTOM VIEW
(BASING DIAGRAM)
49
38
3.5
33
5
29
18
TACCA0008EB
4
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
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