Features
l High sensitivity
l High reliability
l High-speed response
S1223: fc=30 MHz
S1223-01: fc=20 MHz
l Low capacitance
Applications
l Optical measurement equipment
l Analytical equipment, etc.
P H O T O D I O D E
Si PIN photodiode
For visible to IR, precision photometry
S1223 series
s
General ratings
Parameter
Symbol
S1223
S1223-01
Unit
Window material
-
borosilicate glass
-
Package
-
TO-5
-
Active area size
A
2.4 2.8
3.6 3.6
mm
Effective active area
-
6.6
13
mm
2
s
Absolute maximum ratings
Parameter
Symbol
S1223
S1223-01
Unit
Reverse voltage
V
R
Max.
30
V
Power dissipation
P
100
mW
Operating temperature
Topr
-40 to +100
C
Storage temperature
Tstg
-55 to +125
C
s
Electrical and optical characteristics (Ta=25 C)
S1223
S1223-01
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
-
320 to 1100
-
-
320 to 1100
-
nm
Peak sensitivity wavelength
p
-
960
-
-
960
-
nm
=p
-
0.6
-
-
0.6
-
=660 nm
-
0.45
-
-
0.45
-
=780 nm
-
0.52
-
-
0.52
-
Photo sensitivity
S
=830 nm
-
0.54
-
-
0.54
-
A/W
Short circuit current
Isc
100 lx
5
6.3
-
10
13
-
A
Dark current
I
D
V
R
=20 V
-
0.1
10
-
0.2
10
nA
Temp. coefficient of I
D
T
CID
-
1.15
-
-
1.15
-
times/C
Cut-off frequency
fc
V
R
=20 V, -3 dB
-
30
-
-
20
-
MHz
Terminal capacitance
Ct
V
R
=20 V, f=1 MHz
-
10
-
-
20
-
pF
Noise equivalent power
NEP
V
R
=20 V
-
9.4 10
-15
-
-
1.3 10
-14
-
W/Hz
1/2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S1223 series
Cat. No. KPIN1050E01
Mar. 2001 DN
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
1 pF
0.1
1
10
100
10 pF
100 pF
1 nF
(Typ. Ta=25 C, f=1 MHz)
S1223-01
S1223
REVERSE VOLTAGE (V)
DARK CURRENT
1 pA
0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25 C)
S1223
S1223-01
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1000
0.6
0.7
(Typ. Ta=25 C)
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT
(%/
C)
-0.5
200
400
600
(Typ.)
800
1000
0
+0.5
+1.0
+1.5
s
Dimensional outline (unit: mm)
KPINA0073EA
s
Spectral response
KPINB0143EA
KPINB0144EA
s
Dark current vs. reverse voltage
KPINB0145EA
KPINB0146EA
s
Photo sensitivity temperature characteristic
s
Terminal capacitance vs. reverse voltage
20
4.1 0.2
2.8
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.2
CONNECTED TO CASE
The glass window may extend a
maximum of 0.2 mm above the
upper surface of the cap.
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