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Электронный компонент: S1336-18BU

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Features
l TO-18 package with UV glass window
l High sensitivity from the UV to near infrared range
l High reliability versus high power UV radiation
Applications
l Mercury lamp (=254 nm) monitor
l Excimer laser (KrF: =248 nm) monitor
l Other UV detection
P H O T O D I O D E
Si photodiode
For high power UV monitor, and UV to visible, precision photometry
S1226-18BU, S1336-18BU
S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high
sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation (such as from mercury lamps).
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active
area size
Effective
active area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Window
material
Package
(mm)
(mm
2
)
(V)
(C)
(C)
S1226-18BU
S1336-18BU
UV glass
TO-18
1.1 1.1
1.2
5
-40 to +100
-50 to +125
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
Peak
sensitivity
wavelength
p
p
200 nm
Min. Typ.
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coefficient
of I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
(G)
NEP
Type No.
(nm)
(nm)
Min. Typ. (A) (A)
(pA)
(times/C)
(s)
(pF)
Min. Typ. (W/Hz
1/2
)
S1226-18BU
190 to 1000 720 0.36
0.5 0.66
2
1.12
0.15
35
5
50 1.6 10
-15
S1336-18BU
190 to 1100 960 0.50 0.06 0.075 1.0
1.2
20
1.15
0.1
20
0.5
2
5.7 10
-15
Si photodiode
S1226-18BU, S1336-18BU
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KSPD1037E01
Mar. 2001 DN
14
a
3.6 0.2
2.54 0.2
CONNECTED TO CASE
WINDOW
3.0 0.2
4.7 0.1
5.4 0.2
0.45
LEAD
a
S1226-18BU
S1336-18BU
2.4
2.3
The UV glass may extend a maximum of 0.1 mm
above the upper surface of the cap.
0.1
0
190
400
600
800
1000
0.3
0.2
(Typ. Ta=25 C)
0.4
0.5
0.6
0.7
PHOTO SENSITIVITY (A/W)
WAVELENGTH (nm)
S1226-18BU
S1336-18BU
s Spectral response
KSPDB0136EA
TEMPERATURE COEFFICIENT (%/

C)
WAVELENGTH (nm)
(Typ. )
0
190
400
600
800
1000
+1.0
+0.5
+1.5
-0.5
S1226-18BU
S1336-18BU
KSPDB0137EA
RISE TIME
LOAD RESISTANCE (
)
(Typ. Ta
=25 C, V
R
=0 V)
10
2
10 ns
10
3
10
4
10
5
S1226-18BU
S1336-18BU
100 ns
1
s
10
s
100
s
1 ms
DARK CURRENT
REVERSE VOLTAGE (V)
(Typ. Ta
=25 C)
0.01
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
S1226-18BU
S1336-18BU
SHUNT RESISTANCE
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
-20
0
20
40
60
80
10 k
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
S1226-18BU
S1336-18BU
KSPDB0138EA
KSPDB0139EA
KSPDB0140EA
KSPDA0126EA
s Photo sensitivity temperature characteristic
s Dark current vs. reverse voltage
s Rise time vs. load resistance
s Dimensional outline (unit: mm)
s Shunt resistance vs. ambient temperature